OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTD4904NT4G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 2
1 Publication Order Number:
NTD4904N/D
NTD4904N
Power MOSFET
30 V, 79 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain
Current (R
q
JA
)
(Note 1)
Steady
State
T
A
= 25°C
I
D
17.8
A
T
A
= 100°C 12.6
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.6 W
Continuous Drain
Current (R
q
JA
) (Note
2)
T
A
= 25°C
I
D
13
A
T
A
= 100°C 9.2
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25°C P
D
1.4 W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25°C
I
D
79
A
T
C
= 100°C 56
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
52 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
316 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
90 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
47 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
L = 0.1 mH, I
L(pk)
= 37 A, R
G
= 25 W)
E
AS
68.4 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
CASE 369D
IPAK
(Straight Lead
DPAK)
30 V
3.7 mW @ 10 V
R
DS(on)
MAX
79 A
I
D
MAXV
(BR)DSS
5.5 mW @ 4.5 V
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
3
4
CASE 369AD
IPAK
(Straight Lead)
1
2
3
4
N−Channel
D
S
G
AYWW
49
04NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Sourc
e
4
Drain
2
Drain
1
Gate
3
Source
AYWW
49
04NG
AYWW
49
04NG
A = Assembly Location
Y = Year
WW = Work Week
4904N = Device Code
G = Pb−Free Package
1
2
3
4
NTD4904N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.9
°C/W
Junction−to−Tab (Drain)
R
q
JC−TAB
4.3
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
57
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
108
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
15 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.6 2.2 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 30 A 3.0 3.7
mW
I
D
= 15 A 3.0
V
GS
= 4.5 V
I
D
= 30 A 4.0 5.5
I
D
= 15 A 4.0
Forward Transconductance gFS V
DS
= 1.5 V, I
D
= 30 A 76 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
3052
pF
Output Capacitance C
oss
976
Reverse Transfer Capacitance C
rss
23
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
16.8
nC
Threshold Gate Charge Q
G(TH)
4.4
Gate−to−Source Charge Q
GS
8.2
Gate−to−Drain Charge Q
GD
3.0
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
41 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
15.3
ns
Rise Time t
r
19.8
Turn−Off Delay Time t
d(off)
23.4
Fall Time t
f
7.5
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
10.3
ns
Rise Time t
r
20
Turn−Off Delay Time t
d(off)
28.7
Fall Time t
f
8.0
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4904N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.84 1.1
V
T
J
= 125°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt= 100 A/ms,
I
S
= 30 A
40.4
ns
Charge Time ta 20.5
Discharge Time tb 19.9
Reverse Recovery Time Q
RR
35 nC
PACKAGE PARASITIC VALUES
Source Inductance (Note 5)
L
S
T
A
= 25°C
2.48
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK (Note 5) L
D
1.88
Gate Inductance (Note 5) L
G
4.9
Gate Resistance R
G
1.0 2.0
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Assume terminal length of 110 mils.
P1-P3P4-P6P7-P8

NTD4904NT4G

Mfr. #:
Buy NTD4904NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET IPAK 30V 79A 3.7 mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet