NTD4904NT4G

NTD4904N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
10 V
0.006
40
0.003
0.002
12
0
1.8
1.2
1.0
0.6
10,000
0521
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
3
0.010
4
0.004
5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 125100
3 3.5
1510 3
0
5
3
V
DS
10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
T
J
= 125°C
4
T
J
= 25°C
20
10
2.4 V
2.2
1000
4
2.52
610
0.008
80
0.005
100
3.8 V to 6 V
3.4 V
3.6 V
130
40
20
70
100
I
D
= 30 A
T
J
= 25°C
789
0.002
0.006
0.012
60
V
GS
= 10 V
150
100
3.2 V
2.8 V
2.6 V
3.0 V
20
0.004
1.4
0.8
1.6
25
T
J
= 85°C
110
120
30
10
50
80
60
90
T
J
= 25°C
0
130
40
20
70
100
110
120
30
10
50
80
60
90
2.0
NTD4904N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
300101525
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
400
0
1600
5
V
GS
= 0 V
T
J
= 25°C
C
oss
C
iss
2000
3600
V
GS
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS
)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
11
6
105
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
T
J
= 25°C
Q
GD
Q
GS
Q
T
4515
0
0.4
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6 0.7
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
0.8 0.9
20
30
25
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
1000
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
9
1
100
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 37 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
10
20
30
100 125
40
70
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
150
1200
12
20 25
T
J
= 125°C
0.5
800
2400
2800
3200
4
1
7
10
5
2
8
30 35 40
1.0
50
60
NTD4904N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
0.10.00001
PULSE TIME (s)
100
10
0.1
0.01
0.001
0.0001 0.001 0.01 1.0 10 1000.000001
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
SINGLE PULSE
1000
R(t) (C/W)
Figure 13. FET Thermal Response
1.0
PSi TAB-A
Figure 14. GFS vs ID
050
ID (A)
40
10
0
110
GFS (S)
30
70
20
60
10
50
20 30 40 60 70
V
DS
= 1.5 V
80
90
100
80 90 100
ORDERING INFORMATION
Order Number Package Shipping
NTD4904NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4904N−1G IPAK
(Pb−Free)
75 Units / Rail
NTD4904N−35G IPAK Trimmed Lead
(Pb−Free)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD4904NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET IPAK 30V 79A 3.7 mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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