PHE13003A,412

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

If you have any questions related to this document, please contact our nearest sales office via e-

mail or phone (details via salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

PHE13003A

NPN power transistor

3 October 2016 Product data sheet

1. General description

High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)

plastic package.

2. Features and benefits

• Fast switching

• Off-line self-oscillating power supplies

4. Pinning information

Table 1. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 B base

2 C collector

3 E emitter

Table 2. Ordering information

PHE13003A TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

WeEn Semiconductors

voltage

V

collector-base voltage I

V

collector-emitter voltage I

V

emitter-base voltage I

I

collector current DC; Fig. 1 - 1 A

P

total power dissipation T

T

storage temperature -65 150 °C

T

junction temperature - 150 °C