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PHE13003A,412
P1-P3
P4-P6
P7-P9
P10-P11
WeEn Semiconductors
PHE13003A
NPN power transistor
PHE13003A
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
3 October 2016
3 / 10
T
lead
(°C)
0
200
150
50
100
003aae644
40
80
120
P
der
(%)
0
Fig. 2. Normalized total power dissipation as a function of lead temperature
7. Thermal characteristics
Table 4. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-lead)
thermal resistance
from junction to lead
Fig. 3
-
-
60
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board mounted; lead
length = 4 mm
-
150
-
K/W
001aab451
1
10
2
10
-1
10
Z
th(j-lead)
(K/W)
10
-2
t
p
(s)
10
-5
1
10
10
-1
10
-2
10
-4
10
-3
t
p
P
t
Fig. 3. Transient thermal impedance from junction to lead as a function of pulse width
WeEn Semiconductors
PHE13003A
NPN power transistor
PHE13003A
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
3 October 2016
4 / 10
8. Characteristics
Table 5. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
CES
collector-emitter cut-off
current (base shorted)
V
BE
= 0 V; V
CE
= 700 V; T
j
= 125 °C
-
-
5
mA
I
EBO
emitter-base cut-off
current (collector open)
V
EB
= 9 V; I
C
= 0 A; T
lead
= 25 °C
-
-
1
mA
V
CEOsus
collector-emitter
sustaining voltage
(base open)
I
B
= 0 A; I
C
= 1 mA; L
C
= 25 mH;
T
lead
= 25 °C;
Fig. 4
;
Fig. 5
400
-
-
V
I
C
= 0.25 A; I
B
= 50 mA; T
lead
= 25 °C;
Fig. 6
-
0.2
0.5
V
I
C
= 0.5 A; I
B
= 125 mA; T
lead
= 25 °C;
Fig. 6
-
0.3
1
V
V
CEsat
collector-emitter
saturation voltage
I
C
= 0.75 A; I
B
= 250 mA; T
lead
= 25 °C;
Fig. 6
-
0.4
1.5
V
I
C
= 0.25 A; I
B
= 50 mA; T
lead
= 25 °C;
Fig. 7
-
-
1
V
V
BEsat
base-emitter saturation
voltage
I
C
= 0.5 A; I
B
= 125 mA; T
lead
= 25 °C;
Fig. 7
-
-
1.2
V
I
C
= 0.5 mA; V
CE
= 2 V; T
lead
= 25 °C;
Fig. 8
;
Fig. 9
12
-
-
I
C
= 0.4 A; V
CE
= 5 V; T
lead
= 25 °C;
Fig. 8
;
Fig. 9
10
-
30
h
FE
DC current gain
I
C
= 0.8 A; V
CE
= 5 V; T
lead
= 25 °C;
Fig. 8
;
Fig. 9
5
7.5
20
Dynamic characteristics
t
f
fall time
I
C
= 1 A; I
Bon
= 200 mA; V
BB
= -5 V;
L
B
= 1 µH; T
lead
= 25 °C; inductive load;
Fig. 10
;
Fig. 11
-
80
-
ns
WeEn Semiconductors
PHE13003A
NPN power transistor
PHE13003A
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
3 October 2016
5 / 10
001aab987
horizontal
1 Ω
300 Ω
6
V
vertical
oscilloscope
50
V
100 Ω to 200 Ω
30 Hz to 60 Hz
Fig. 4. Test circuit for collector-emitter sustaining
voltage
001aab988
V
CE
(V)
min
V
CEOsus
I
C
(mA)
10
100
250
0
Fig. 5. Oscilloscope display for collector-emitter
sustaining voltage test waveform
I
C
(A)
10
-
2
10
1
10
-
1
003aad548
0.8
1.2
0.4
1.6
2.0
V
CEsat
(V)
0
T
j
= -
35 °C
T
j
= 125 °C
T
j
= 25 °C
Fig. 6. Collector-emitter saturation voltage as a function
of collector current; typical values
003aad549
0.8
0.4
1.2
1.6
V
BEsat
(V)
0
I
C
(A)
10
-
2
10
1
10
-
1
1.0
0.6
0.2
1.4
T
j
= 125 °C
T
j
= -
35 °C
T
j
= 25 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values
P1-P3
P4-P6
P7-P9
P10-P11
PHE13003A,412
Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
Bipolar Transistors - BJT TRANSISTOR DIFF 700V 1A
Lifecycle:
New from this manufacturer.
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