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MXLRT100KP260A

P1-P3P4-P6P7-P7
MRT100KP40A – MRT100KP400CA(e3)
Available
Unidirectional and Bidirectional Transient
Voltage Suppressor (TVS) Device
Screening in
reference to
MIL-PRF-19500
available
DESCRIPTION
These MRT100KP40A – MRT100KP400CA high reliability devices protect against dangerous
high-voltage, short term transients such as those caused the the secondary effects of lightning
per IEC61000-4-5 (see protection classes below) and RTCA/DO-160. They also protect
against voltage spikes caused by inductive load switching, induced RFI, and ESD or EFT per
IEC61000-4-2 and IEC61000-4-4. Clamping time is nearly instantaneous at < 5ns.
DO-204AR
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Available in both unidirectional and bidirectional configurations
• Suppresses transients up to 100 kW @ 6.4/69 µs
• Fast response with less than 5 ns turn-on time
• Preferred 100 kW TVS for aircraft power bus protection
• 3σ lot norm screening performed on standby current I
D
• 100% surge tested devices
• Multiple screening levels in reference to MIL-PRF-19500 are available. Refer to Hirel Non-
Hermetic Product Portfolio for more details on the screening options.
(See part nomenclature for all options.)
• High reliability controlled devices have wafer fabrication and assembly lot traceability
• Moisture classification is level 1 with no dry pack required per IPC/JEDEC J-STD-020B
• RoHS compliant versions are available
APPLICATIONS / BENEFITS
• Economical TVS series for thru-hole mounting
• Protection from high power switching transients, induced RF, and lightning threats with
comparatively small package size (0.25 inch diameter)
• Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4
• Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 4 (6.4/69 μs) on all devices
• Pin injection protection per RTCA/DO-160 up to Level 5 for Waveform 4 (6.4/69 μs) on device types
MRT100KP33A or CA up to MRT100KP260A or CA
• Pin injection protection per RTCA/DO-160 up to Level 3 for Waveform 5A (40/120 μs) on all devices
• Pin injection protection per RTCA/DO-160 up to Level 4 for Waveform 5A (40/120 μs) on device
types MRT100KP33A or CA up to MRT100KP64A or CA
•
Consult Factory for other voltages with similar Peak Pulse Power (P
PP
) capabilities
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01012, Rev. C (15/06/15) ©2015 Microsemi Corporation Page 1 of 7
MRT100KP40A – MRT100KP400CA(e3)
MAXIMUM RATINGS @ 25 ºC unless otherwise noted
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
T
J
and
T
STG
-65 to +150
o
C
Thermal Resistance, Junction to Lead @ 3/8 inch (10 mm)
lead length from body
R
ӨJL
17.5
o
C/W
Thermal Resistance, Junction to Ambient
(1)
R
ӨJA
77.5
o
C/W
Peak Pulse Power Dissipation
(2)
µ
P
PP
100
kW
Steady-State Power Dissipation @ T
A
= 25 ºC
P
D
7
1.61
(1)
W
T
clamping
(0 volts to V
(
BR)
min, theoretical)
< 100
< 5
ps
ns
Surge Peak Forward Current
(2)
I
FSM
250
A
Solder Temperature @ 10 s
260
o
C
Notes: 1. When mounted on FR4 PC board with 4 mm
2
copper pads (1 oz) and track width 1 mm, length 25 mm.
2. At 8.3 ms half-sine wave (unidirectional only).
MECHANICAL and PACKAGING
• CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
• TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable per MIL-STD-750, method 2026.
• MARKING: Part number
• POLARITY: Cathode indicated by band. No cathode band on bidirectional devices.
• TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: Approximately 1.7 grams
• See Package Dimensions
on last page.
PART NOMENCLATURE
M RT 100 K P 40 C A (e3)
Reliability Level
M
MA
MX
MXL
(*See
Hirel Non-Hermetic
Product Portfolio)
RTCA/DO-160 Rated
Peak Pulse Power
Kilowatt Rating
Encapsulated Plastic
Package
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Voltage Tolerance
A = 5% tolerance level
Blank = 10% tolerance
Polarity
C = Bi-directional
Blank = Unidirectional
Stand-off Voltage Rating
(see Electrical Characteristics
table)
RF01012, Rev. C (15/06/15) ©2015 Microsemi Corporation Page 2 of 7
MRT100KP40A – MRT100KP400CA(e3)
SYMBOLS & DEFINITIONS
Symbol
Definition
α
V(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
V
WM
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
P
PP
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
V
(
BR)
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
I
D
Standby Current: The current through the device at rated stand-off voltage.
I
PP
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
V
C
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
I
(BR)
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR)
RF01012, Rev. C (15/06/15) ©2015 Microsemi Corporation Page 3 of 7
P1-P3P4-P6P7-P7

MXLRT100KP260A

Mfr. #:
Buy MXLRT100KP260A
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
Delivery:
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