MXLRT100KP260A

MRT100KP40A – MRT100KP400CA(e3)
ELECTRICAL CHARACTERISTICS @ 25 ºC
Part
Number
Rated
Stand-off
Voltage
V
WM
Breakdown Voltage
V
(BR)
Volts
@ I
(BR)
V
(BR)
I
(BR)
Maximum
Clamping
@ I
PP
(1)
V
C
Maximum
Reverse
Leakage
@ V
WM
I
D
Maximum
Peak Pulse
Current
(2)
@ 6.4/69 µs
I
PP
Maximum
V
(BR)
Temperature
Coefficient
α
V(BR)
Volts
Volts
mA
Volts
µAmps
Amps
mV/°C
MRT100KP40A
MRT100KP43A
40
43
44.4-49.1
47.8-52.8
20
10
78.6
84.5
1500
500
1273 *
1184 *
46
50
MRT100KP45A
MRT100KP48A
45
48
50.0-55.3
53.3-58.9
5
5
88.5
94.3
150
150
1130 *
1061 *
52
56
MRT100KP51A
MRT100KP54A
51
54
56.7-62.7
60.0-66.3
5
5
101
106
50
25
990 *
943 *
60
63
MRT100KP58A
MRT100KP60A
58
60
64.4-71.2
66.7-73.7
5
5
114
118
15
15
878
848
68
71
MRT100KP64A
MRT100KP70A
64
70
71.1-78.6
77.8-86.0
5
5
126
138
10
10
795
725
76
83
MRT100KP75A
MRT100KP78A
75
78
83.3-92.1
86.7-95.8
5
5
147
153
10
10
680
655
89
93
MRT100KP85A
MRT100KP90A
85
90
94.4-104
100-111
5
5
166
178
10
10
602
563
102
109
MRT100KP100A
MRT100KP110A
100
110
111-123
122-135
5
5
197
216
10
10
508
463
121
133
MRT100KP120A
MRT100KP130A
120
130
133-147
144-159
5
5
235
254
10
10
426
394
145
157
MRT100KP150A
MRT100KP160A
150
160
167-185
178-197
5
5
296
315
10
10
338
318
183
195
MRT100KP170A
MRT100KP180A
170
180
189-209
200-221
5
5
334
354
10
10
300
283
207
219
MRT100KP200A
MRT100KP220A
200
220
222-245
245-271
5
5
392
434
10
10
256
231
243
269
MRT100KP250A
MRT100KP260A
250
260
278-308
289-320
5
5
493
512
10
10
203
196
306
318
MRT100KP280A
MRT100KP300A
280
300
311-345
333-369
5
5
552
590
10
10
181
170
344
368
MRT100KP350A
MRT100KP400A
350
400
389-431
444-492
5
5
690
787
10
10
145
127
430
490
NOTES:
1. Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 µs rise time due
to lead length.
2. The maximum peak pulse current (I
PP
) shown represents the performance capabilities by design.
*Surge test screening is only performed up to 900 Amps (test equipment limitations).
RF01012, Rev. C (15/06/15) ©2015 Microsemi Corporation Page 4 of 7
MRT100KP40A – MRT100KP400CA(e3)
GRAPHS
tp Pulse Time sec. T
L
Lead Temperature °C
FIGURE 1 FIGURE 2
Peak Pulse Power vs. Pulse Time Power Derating
To 50% of Exponentially Decaying Pulse
NOTE: This P
PP
versus time graph allows the designer to use these
parts over a broad power spectrum using the guidelines illustrated in
MicroNote 104 on www.microsemi.com
. Aircraft transients are described
with exponential decaying waveforms. For suppression of square-wave
impulses, derate power and current to 66% of that for the exponential
decay shown in Figure 1.
CORRECT INSTALLATION INCORRECT
FIGURE 3 FIGURE 5
FIGURE 4 FIGURE 6
Peak Pulse Power (P
PP
) or
Continuous Power in % of 25°C rating
P
PP
Peak Pulse Power vs. Pulse Time kW
Non-Repetitive Pulse
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more
prone to adverse
parasitic inductance effects in the
mounting leads. Minimizing the shunt path
of the lead inductance and their V =
-
Ldi/dt effects will optimize the TVS
effectiveness. Examples of optimum
installation and poor installation are
il
lustrated in Figures 3 to 6. Figure 3
illustrates minimal parasitic inductance
with attachment at end of device.
Inductive voltage drop is across
the input
leads. Virtually no “overshoot” voltage
results as illustrated with Figure 4. The
loss of effectiven
ess in protection caused
by excessive parasitic inductance is
illustrated in Figures 5 and 6. Also see
MicroNote 111
for further information on
“P
arasitic Lead Inductance in TVS”.
RF01012, Rev. C (15/06/15) ©2015 Microsemi Corporation Page 5 of 7
MRT100KP40A – MRT100KP400CA(e3)
GRAPHS (continued)
FIGURE 7Waveform 3 FIGURES 8Waveform 4 FIGURE 9 – Waveform 5A
NOTE: The 1 MHz damped oscillatory waveform (3) has an effective pulse width of 4 µs. Equivalent peak pulse power at
each of the pulse widths represented in RTCA/DO-160 for waveforms 3, 4 and 5A (above) have been determined
referencing Figure 1 herein as well as MicroNotes 104 and 120 (found on www.microsemi.com
) and are listed below.
WAVEFORM
NUMBER
PULSE
WIDTH
µ
s
PEAK
PULSE
POWER
kW
Peak Pulse Current Conversion
Factor
* from Rated I
PP
at 6.4/69
µs
3
4
340
3.40x
4
6.4/69
100
1.00x
5A
40/120
70
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated I
PP
in the Electrical Characteristics Table on page 2.
NOTE 1: High current fast rise-time transients of 250 ns or less can more than triple the V
C
from parasitic inductance effects
(V= -Ldi/dt) compared to the clamping voltage shown in the initial Electrical Characteristics
table as also described in
Figures 5 and 6 herein.
NOTE 2: Also see MicroNotes 127, 130, and 132 on www.microsemi.com
for further information on transient voltage suppressors
with reference to aircraft industry specification RTCA/DO-160.
RF01012, Rev. C (15/06/15) ©2015 Microsemi Corporation Page 6 of 7

MXLRT100KP260A

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
TVS Diodes / ESD Suppressors Hi Rel TVS
Lifecycle:
New from this manufacturer.
Delivery:
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