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PBHV3160ZX

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
PBHV3160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 August 2014 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -600 V
V
CEO
collector-emitter voltage open base - -600 V
V
CESM
collector-emitter peak voltage V
BE
= 0 V - -600 V
V
EBO
emitter-base voltage open collector - -6 V
I
C
collector current - -0.1 A
[1] - 0.65 WP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 1.4 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
aaa-013952
T
amb
(°C)
-60 18010020
0.8
0.4
1.2
1.6
P
tot
(W)
0
(1)
(2)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
NXP Semiconductors
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
PBHV3160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 August 2014 4 / 14
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 190 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 89 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
PBHV3160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 August 2014 5 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -400 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -400 V; I
E
= 0 A; T
j
= 150 °C - - -10 µA
I
CES
collector-emitter cut-off
current
V
CE
= -400 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
h
FE
DC current gain V
CE
= -10 V; I
C
= -10 mA; T
amb
= 25 °C 70 130 -
V
CEsat
collector-emitter
saturation voltage
I
C
= -30 mA; I
B
= -6 mA; T
amb
= 25 °C - -150 -250 mV
V
BEsat
base-emitter saturation
voltage
I
C
= -50 mA; I
B
= -5 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- - -950 mV
f
T
transition frequency V
CE
= -10 V; I
C
= -5 mA; f = 100 MHz - 38 - MHz
C
c
collector capacitance V
CB
= -20 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 6 - pF
C
e
emitter capacitance V
EB
= -0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 76 - pF
aaa-013915
100
50
150
200
h
FE
0
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
V
CE
= −10 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
aaa-014275
100
50
150
200
h
FE
0
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2) (3)
h
FE
= f
(IC)
T
amb
= 25 °C
(1) V
CE
= -10 V
(2) V
CE
= -25 V
(3) V
CE
= -50 V
Fig. 5. DC current gain as a function of collector
current; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15

PBHV3160ZX

Mfr. #:
Buy PBHV3160ZX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran
Lifecycle:
New from this manufacturer.
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