OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PBHV3160ZX

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
PBHV3160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 August 2014 6 / 14
V
CE
(V)
0 -5-4-2 -3-1
aaa-013916
-0.04
-0.06
-0.02
-0.08
-0.10
I
C
(A)
0
-3 mA
I
B
= -30 mA
-27 mA
-24 mA
-21 mA
-18 mA
-15 mA
-12 mA
-9 mA
-6 mA
T
amb
= 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
aaa-013917
-0.4
-0.8
-1.2
V
BE
(V)
0
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
V
CE
= −10 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Base-emitter voltage as a function of collector
current; typical values
aaa-013918
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 8. Base-emitter saturation voltage as a function of
collector current; typical values
aaa-013919
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
NXP Semiconductors
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
PBHV3160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 August 2014 7 / 14
aaa-013920
-1
-10
-1
-10
V
CEsat
(V)
-10
-2
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 10.0
(2) I
C
/I
B
= 5.0
(3) I
C
/I
B
= 2.5
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-013921
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
-1
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-013922
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
-1
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(2)(1) (3)
T
amb
= 25 °C
(1) I
C
/I
B
= 10.0
(2) I
C
/I
B
= 5.0
(3) I
C
/I
B
= 2.5
Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values
11. Test information
NXP Semiconductors
PBHV3160Z
600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor
PBHV3160Z All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 August 2014 8 / 14
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
P1-P3P4-P6P7-P9P10-P12P13-P15

PBHV3160ZX

Mfr. #:
Buy PBHV3160ZX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet