BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 2 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3. Ordering information
4. Limiting values
Table 2. Ordering information
Type number Package
Name Description Version
BYQ28E-200 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BYQ28ED-200 DPAK plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
SOT428
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 200 V
V
RWM
crest working reverse voltage - 200 V
V
R
reverse voltage square waveform; δ = 1.0 - 200 V
I
O(AV)
average output current square waveform; δ = 0.5;
T
mb
≤ 119 °C; both diodes conducting
-10A
I
FRM
repetitive peak forward current t
p
=25µs; square waveform; δ = 0.5;
T
mb
≤ 119 °C; per diode
-10A
I
FSM
non-repetitive peak forward
current
t = 10 ms; sinusoidal waveform; per
diode
-50A
t = 8.3 ms; sinusoidal waveform; per
diode
-55A
I
RM
peak reverse recovery current t
p
=2µs; δ = 0.001 - 0.2 A
I
RSM
non-repetitive peak reverse
current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature −40 +150 °C
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge voltage all pins; human body model;
C = 250 pF; R = 1.5 kΩ
-8kV
