BYQ28_SER_E_ED_4 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 04 — 5 December 2007 4 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
6. Characteristics
Table 5. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
F
forward voltage I
F
= 5 A; T
j
= 150 °C; see Figure 2 - 0.8 0.895 V
I
F
= 5 A; see Figure 2 - 0.95 1.1 V
I
F
= 10 A; see Figure 2 - 1.1 1.25 V
I
R
reverse current V
R
= 200 V - 2 10 µA
V
R
= 200 V; T
j
= 100 °C - 0.1 0.2 mA
Dynamic characteristics
Q
r
recovered charge I
F
=2AtoV
R
≥ 30 V; dI
F
/dt=20A/µs;
see
Figure 3
- 49nC
t
rr
reverse recovery time ramp recovery; I
F
= 1 A to V
R
≥ 30 V;
dI
F
/dt = 100 A/µs; see Figure 3
- 1525ns
step recovery; when switched from
I
F
= 0.5 A to I
R
= 1 A; measured at
I
R
= 0.25 A
- 1020ns
I
RM
peak reverse recovery
current
I
F
=5AtoV
R
≥ 30 V; dI
F
/dt=50A/µs;
see
Figure 3
- 0.5 0.7 A
V
FR
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/µs; see Figure 4 -1-V
(1) T
j
= 150 °C; typical values
(2) T
j
= 150 °C; maximum values
(3) T
j
=25°C; maximum values
Fig 2. Forward current as a function of forward voltage
001aag978
V
F
(V)
0 1.51.00.5
5
10
15
I
F
(A)
0
(3)(2)(1)
