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NSVBT2222ADW1T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 5
1 Publication Order Number:
MBT2222ADW1T1/D
MBT2222ADW1,
NSVBT2222ADW1
General Purpose Transistor
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
Electrostatic Discharge ESD HBM Class 2
MM Class B
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Package Dissipation (Note 1),
T
A
= 25°C
P
D
150 mW
Thermal Resistance,
Junction−to−Ambient
R
q
JA
833 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device Package Shipping
†
ORDERING INFORMATION
MARKING DIAGRAM
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
SC−88/SC70−6/SOT−363
CASE 419B
STYLE 1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
http://onsemi.com
1P M G
G
1
6
MBT2222ADW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
1P = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
NSVBT2222ADW1T1G SOT−363
(Pb−Free)
3000 /
Tape & Reel
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0) V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0) V
(BR)CBO
75 − Vdc
Emitter−Base Breakdown Voltage, (I
E
= 10 mAdc, I
C
= 0) V
(BR)EBO
6.0 − Vdc
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) I
CEX
− 10 nAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
−
−
0.01
10
mAdc
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0) I
EBO
− 100 nAdc
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) I
BL
− 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= −55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 2)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 2)
h
FE
35
50
75
35
100
50
40
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.3
1.0
Vdc
Base−Emitter Saturation Voltage (Note 2)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
−
1.2
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300 − MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
− 8.0 pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
− 25 pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
−
−
8.0
4.0
X 10
− 4
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50
75
300
375
−
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
5.0
25
35
200
mmhos
Collector Base Time Constant (I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz) rb, C
c
− 150 ps
Noise Figure (I
C
= 100 mAdc, V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= −0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 10
ns
Rise Time t
r
− 25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 60
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
+30 V
200
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
C
S
* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0
k
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT GAINV
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
T
J
= 125°C
T
J
= 25°C
25°C
-55°C
I
C
= 1.0 mA
10 mA 150 mA
500 mA
V
CE
= 1.0 V
V
CE
= 10 V
P1-P3P4-P6

NSVBT2222ADW1T1G

Mfr. #:
Buy NSVBT2222ADW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC88 GP XSTR NPN 40V
Lifecycle:
New from this manufacturer.
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