NSVBT2222ADW1T1G

MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
4
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
1005.0 7.0 30 50 200
10
30
7.0
20
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. TurnOff Time
I
C
, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
= t
s
- 1/8 t
f
t
f
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
R
S
, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 500.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
R
S
= OPTIMUM
R
S
= SOURCE
R
S
= RESISTANCE
I
C
= 1.0 mA, R
S
= 150 W
500 mA, R
S
= 200 W
100 mA, R
S
= 2.0 kW
50 mA, R
S
= 4.0 kW
f = 1.0 kHz
I
C
= 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 500.2 0.3 0.5 0.7
C
cb
20
30
C
eb
Figure 10. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
f
T
, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
V
CE
= 20 V
T
J
= 25°C
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
5
Figure 11. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT (mV/ C)
-1.0
-1.5
-2.5
°
R
q
VC
for V
CE(sat)
R
q
VB
for V
BE
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500 1.0 k
1.0 V
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
MBT2222ADW1, NSVBT2222ADW1
http://onsemi.com
6
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd
M
123
A1
A
c
654
E
b6X
DIM MIN NOM MAX
MILLIMETERS
A −−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b 0.15 0.20 0.25
C 0.08 0.15 0.22
D 1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A
E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
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NSVBT2222ADW1T1G

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Bipolar Transistors - BJT SS SC88 GP XSTR NPN 40V
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