MT72KSZS2G72PZ-1G1D1 Datasheet MT72KSZS2G72PZ-1G1D1 | P13-P15

4. For further information, refer to technical note TN-00-08: “Thermal Applications,”

available on Micron’s Web site.

5. The refresh rate is required to double when 85°C < T

≤ 95°C.

6. Inputs are terminated to V

/2. Input current is dependent on terminating resistance se-

lected in register.

8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3 RDIMM

Electrical Specifications

PDF: 09005aef83bbdb26

kszs72c1g_2gx72pz.pdf – Rev. F 7/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

DRAM Operating Conditions

Recommended AC operating conditions are given in the DDR3 component data sheets.

Component specifications are available on Micron’s web site. Module speed grades cor-

relate with component speed grades, as shown below.

Table 10: Module and Component Speed Grades

DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades

Module Speed Grade Component Speed Grade

-2G1 -093

-1G9 -107

-1G6 -125

-1G4 -15E

-1G1 -187E

-1G0 -187

-80C -25E

-80B -25

Design Considerations

Simulations

Micron memory modules are designed to optimize signal integrity through carefully de-

signed terminations, controlled board impedances, routing topologies, trace length

matching, and decoupling. However, good signal integrity starts at the system level.

Micron encourages designers to simulate the signal characteristics of the system's

memory bus to ensure adequate signal integrity of the entire memory system.

Power

Operating voltages are specified at the DRAM, not at the edge connector of the module.

Designers must account for any system voltage drops at anticipated power levels to en-

sure the required supply voltage is maintained.

8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3 RDIMM

DRAM Operating Conditions

PDF: 09005aef83bbdb26

kszs72c1g_2gx72pz.pdf – Rev. F 7/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Specifications

Table 11: DDR3 I

CDD

Specifications and Conditions – 8GB (Die Revision F)

Values are for the MT41K512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb 1.35V TwinDie (512

Meg x 4) component data sheet

Parameter

Combined

Symbol 1600 1333 1066 Units

Operating current 0: One bank ACTIVATE-to-PRE-

CHARGE

CDD0

TBD 2790 2358 mA

Operating current 1: One bank ACTIVATE-to-READ-

to-PRECHARGE

CDD1

TBD 3060 2628 mA

Precharge power-down current: Slow exit I

CDD2P0

TBD 720 576 mA

Precharge power-down current: Fast exit I

CDD2P1

TBD 1080 882 mA

Precharge quiet standby current I

CDD2Q

TBD 2340 1908 mA

Precharge standby current I

CDD2N

TBD 2340 1908 mA

Precharge standby ODT current I

CDD2NT

TBD 2700 2268 mA

Active power-down current I

CDD3P

TBD 1206 972 mA

Active standby current I

CDD3N

TBD 2520 2088 mA

Burst read operating current I

CDD4R

TBD 4050 3348 mA

Burst write operating current I

CDD4W

TBD 4050 3348 mA

Refresh current I

CDD5B

TBD 4770 4338 mA

Self refresh temperature current: MAX T

= 85°C I

CDD6

TBD 432 432 mA

Self refresh temperature current (SRT-enabled):

MAX T

= 95°C

CDD6ET

TBD 648 648 mA

All banks interleaved read current I

CDD7

TBD 6840 5328 mA

Reset current I

CDD8

TBD 864 720 mA

8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3 RDIMM

Specifications

PDF: 09005aef83bbdb26

kszs72c1g_2gx72pz.pdf – Rev. F 7/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

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MT72KSZS2G72PZ-1G1D1

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MODULE DDR3L SDRAM 16GB 240RDIMM

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