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MT72KSZS2G72PZ-1G1D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
Table 12: DDR3 I
CDD
Specifications and Conditions – 16GB (Die Revision D)
Values are for the MT41K1G4 DDR3 SDRAM only and are computed from the values specified in the 4Gb 1.35V TwinDie (1
Gig x 4) component data sheet
Parameter
Combined
Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
CDD0
TBD 2718 2448 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
CDD1
TBD 2988 2808 mA
Precharge power-down current: Slow exit I
CDD2P0
TBD 864 864 mA
Precharge power-down current: Fast exit I
CDD2P1
TBD 1188 1098 mA
Precharge quiet standby current I
CDD2Q
TBD 1692 1512 mA
Precharge standby current I
CDD2N
TBD 1764 1584 mA
Precharge standby ODT current I
CDD2NT
TBD 1908 1728 mA
Active power-down current I
CDD3P
TBD 1278 1188 mA
Active standby current I
CDD3N
TBD 1908 1728 mA
Burst read operating current I
CDD4R
TBD 3798 3348 mA
Burst write operating current I
CDD4W
TBD 3978 3528 mA
Refresh current I
CDD5B
TBD 4788 4518 mA
Self refresh temperature current: MAX T
C
= 85°C I
CDD6
TBD 864 864 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
CDD6ET
TBD 1080 1080 mA
All banks interleaved read current I
CDD7
TBD 8118 7128 mA
Reset current I
CDD8
TBD 1008 1008 mA
8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef83bbdb26
kszs72c1g_2gx72pz.pdf – Rev. F 7/13 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 13: Registering Clock Driver Electrical Characteristics
SSTE32882 devices or equivalent; Note 1 applies to entire table
Parameter Symbol Pins Min Nom Max Units Notes
DC supply voltage V
DD
– 1.283 1.35 1.45 V
1.425 1.5 1.575 V 2
DC reference volt-
age
V
REF
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
DC termination
voltage
V
TT
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
AC high-level input
voltage
V
IH(AC)
Control, command,
address
V
REF
+ 175mV – V
DD
+ 400mV V
AC low-level input
voltage
V
IL(AC)
Control, command,
address
–0.4 – V
REF
- 175mV V
DC high-level input
voltage
V
IH(DC)
Control, command,
address
V
REF
+ 100mV – V
DD
+ 0.4 V
DC low-level input
voltage
V
IL(DC)
Control, command,
address
–0.4 – V
REF
- 100mV V
High-level input
voltage
V
IH(CMOS)
RESET#, MIRROR 0.65 × V
DD
– V
DD
V
Low-level input
voltage
V
IL(CMOS)
RESET#, MIRROR 0 – 0.35 × V
DD
V
Differential input
crosspoint voltage
range
V
IX(AC)
CK, CK#, FBIN, FBIN# 0.5 × V
DD
- 175mV 0.5 × V
DD
0.5 × V
DD
+ 175mV V
Differential input
voltage
V
ID(AC)
CK, CK# 350 – V
DD
+ TBD mV
High-level output
current
I
OH
Err_Out# – – TBD mA
Low-level output
current
I
OL
Err_Out# TBD – TBD mA
Notes:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for
the specific device used on the module.
2. The register is backward-compatible with 1.5V operation. Refer to device specification
for details and operation guidance.
8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3 RDIMM
Registering Clock Driver Specifications
PDF: 09005aef83bbdb26
kszs72c1g_2gx72pz.pdf – Rev. F 7/13 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM. Refer to JEDEC
standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with
Temperature Sensor."
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 14: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
– 2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
– 0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range – –40 125 °C
Temperature sensor accuracy (class B) – –1.0 1.0 °C
Table 15: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 – µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R – 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 – µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 – µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 – ns
Start condition setup time
t
SU:STA 4.7 – µs
Stop condition setup time
t
SU:STO 4.0 – µs
8GB, 16GB (x72, ECC, QR) 240-Pin 1.35V DDR3 RDIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef83bbdb26
kszs72c1g_2gx72pz.pdf – Rev. F 7/13 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MT72KSZS2G72PZ-1G1D1

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MODULE DDR3L SDRAM 16GB 240RDIMM
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