BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 3 of 13
NXP Semiconductors
BGA6489
MMIC wideband medium power amplifier
5. Limiting values
[1] T
sp
is the temperature at the solder point of the ground lead, pin 2.
6. Thermal characteristics
[1] T
sp
is the temperature at the solder point of the ground lead, pin 2.
7. Characteristics
[1] V
S
= DC operating supply voltage applied to R
bias
; see Figure 10
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
D
DC device voltage on pin 1; RF input AC coupled - 6 V
I
S
DC supply current - 150 mA
P
tot
total power dissipation T
sp
≤ 70 °C
[1]
- 800 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
P
D
maximum drive power - 15 dBm
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point T
sp
≤ 70 °C
[1]
100 K/W
Table 7. Static characteristics
V
S
= 8 V; T
j
= 25
°
C; R
bias
=39
Ω
[1]
Symbol Parameter Conditions Min Typ Max Unit
V
D
DC device voltage on pin 1; I
S
=78mA - 5.1 - V
I
S
supply current 70 78 86 mA
Table 8. Characteristics
V
S
=8V;I
S
= 78 mA; T
amb
=25
°
C; IP3
(out)
tone spacing = 1 MHz; P
L
= 0 dB per tone, R
bias
=39
Ω
;
Z
L
=Z
S
=50
Ω
; unless otherwise specified; see Figure 10.
Symbol Parameter Conditions Min Typ Max Unit
|s
21
|
2
Insertion power gain f = 850 MHz - 20 - dB
f = 1950 MHz - 16 - dB
f = 2500 MHz - 15 - dB
R
LIN
return losses input f = 850 MHz - 14 - dB
f = 1950 MHz - 16 - dB
f = 2500 MHz - 19 - dB
R
LOUT
return losses output f = 850 MHz - 16 - dB
f = 1950 MHz - 12 - dB
f = 2500 MHz - 10 - dB
