BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 7 of 13
NXP Semiconductors
BGA6489
MMIC wideband medium power amplifier
8. Application information
Figure 10 shows a typical application circuit for the BGA6489 MMIC. The device is
internally matched to 50 and therefore does not require any external matching. The
value of the input and output DC blocking capacitors C1 and C2 depends on the operating
frequency; see Table 9. Capacitors C1 and C2 are used in conjunction with L1 and C3 to
fine tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor.
A1µF capacitor (C5) can be added for optimum supply decoupling. The external
components should be placed as close as possible to the MMIC. When using via holes,
use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias
resistor providing DC current stability with temperature.
V
S
= 8 V; R
bias
=39.
Fig 9. Supply current as function of operating junction temperature; typical values
I
s
(mA)
40 4020 0 60 80
T
j
(°C)
20
60
100
90
70
80
mgx408
(1) Optional capacitor for optimum supply decoupling.
(2) R1 values at operating supply voltage:
V
S
= 6 V; R1 = 27 .
V
S
= 8 V; R1 = 39 .
V
S
= 11 V; R1 = 82 .
Fig 10. Typical application circuit
50
microstrip
C1 C2
C3
L1
V
S
50
microstrip
C4 C5
(1)
R1
(2)
mgx419
1
V
D
2
3
BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 8 of 13
NXP Semiconductors
BGA6489
MMIC wideband medium power amplifier
[1] Optional.
8.1 Scattering parameters
Table 9. List of components
See Figure 10 for circuit.
Component Description Package Value at operating frequency
500 MHz 800 MHz 1950 MHz 2400 MHz 3500 MHz
C1, C2 multilayer ceramic chip capacitor 0603 220 pF 100 pF 68 pF 56 pF 39 pF
C3 multilayer ceramic chip capacitor 0603 100 pF 68 pF 22 pF 22 pF 15 pF
C4 multilayer ceramic chip capacitor 0603 1 nF 1 nF 1 nF 1 nF 1 nF
C5
[1]
electrolytic or tantalum capacitor 0603 1 µF1µF1µF1µF1µF
L1 SMD inductor 0603 68 nH 33 nH 22 nH 18 nH 15 nH
R1 SMD resistor 0.5 W; V
S
= 8 V - 39 39 39 39 39
Table 10. Scattering parameters
I
S
= 78 mA; V
S
=8V; P
D
=
30 dBm; Z
O
=50
; T
amb
=25
°
C
f (MHz) s
11
s
21
s
12
s
22
K
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
200 0.06 28.11 12.79 164.42 0.06 0.30 0.12 22.91 1.1
300 0.09 27.41 12.59 156.85 0.06 0.39 0.13 35.38 1.1
400 0.11 21.64 12.31 149.28 0.06 0.35 0.14 46.54 1.1
500 0.12 15.28 11.97 141.88 0.06 0.32 0.14 57.20 1.1
600 0.14 8.01 11.57 134.79 0.06 0.04 0.15 61.41 1.1
700 0.16 0.34 11.18 127.97 0.06 0.63 0.16 76.76 1.1
800 0.17 7.27 10.75 121.56 0.05 1.57 0.16 85.75 1.2
900 0.18 14.78 10.24 115.06 0.05 1.85 0.17 94.28 1.2
1000 0.19 22.18 9.80 109.18 0.05 3.16 0.17 102.4 1.2
1100 0.20 29.33 9.40 103.40 0.05 4.29 0.17 110.3 1.2
1200 0.21 36.41 8.96 98.12 0.05 5.64 0.17 118.5 1.2
1300 0.21 42.47 8.53 92.76 0.05 7.03 0.17 126.7 1.2
1400 0.22 49.06 8.16 87.50 0.06 7.74 0.17 134.8 1.2
1500 0.22 55.46 7.85 82.76 0.06 9.08 0.17 143.5 1.3
1600 0.22 61.20 7.51 78.52 0.06 10.76 0.16 152.7 1.3
1700 0.22 67.02 7.16 74.16 0.06 11.89 0.16 161.8 1.3
1800 0.21 73.40 6.90 69.37 0.06 12.34 0.16 171.9 1.3
1900 0.21 78.99 6.69 65.14 0.06 13.16 0.16 177.4 1.3
2000 0.20 84.54 6.42 61.15 0.06 14.33 0.16 166.81 1.3
2100 0.19 91.32 6.16 56.80 0.07 14.84 0.17 156.07 1.3
2200 0.18 97.58 5.99 52.55 0.07 15.05 0.17 145.29 1.3
2300 0.17 103.60 5.83 49.08 0.07 15.72 0.19 135.65 1.3
2400 0.16 111.90 5.58 45.43 0.07 15.96 0.20 126.23 1.3
2500 0.14 120.80 5.39 40.67 0.08 15.27 0.22 117.16 1.3
2600 0.13 129.80 5.30 36.66 0.08 14.68 0.24 110.35 1.3
BGA6489_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 June 2009 9 of 13
NXP Semiconductors
BGA6489
MMIC wideband medium power amplifier
2700 0.13 143.80 5.18 33.88 0.08 15.64 0.28 104.05 1.3
2800 0.12 154.47 5.08 30.28 0.08 15.56 0.31 97.10 1.3
2900 0.11 164.40 4.71 22.43 0.09 11.60 0.28 91.75 1.3
3000 0.11 178.65 4.66 18.90 0.09 11.05 0.31 84.80 1.3
3100 0.12 160.01 4.45 18.63 0.10 10.63 0.33 80.37 1.3
Table 10. Scattering parameters
I
S
= 78 mA; V
S
=8V; P
D
=
30 dBm; Z
O
=50
; T
amb
=25
°
C
f (MHz) s
11
s
21
s
12
s
22
K
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)

OM7612/BGA6489B

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Development Tools OM7612/DEMOBOARDS//BGA6489B/NO MARKING * BOARDS
Lifecycle:
New from this manufacturer.
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