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TLE6280GPNT

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25
Datasheet TLE6280GP
13 2007-07-19
Electrical Characteristics
(continued)
Parameter and Conditions Symbol Values Unit
at Tj = –40 … +150 °C, unless otherwise specified
and supply voltage range V
S = 8 ... 20V; f
PWM
= 20kHz
min typ max
Dynamic characteristics (continued)
Disable propagation time tP(DIS) -- 350 700 ns
Wake up time after enabling the device tWU 10 µs
Input propagation time (low on) tP(ILN) -- 220 500 ns
Input propagation time (low off) tP(ILF) -- 180 500 ns
Input propagation time (high on) tP(IHN) -- 250 500 ns
Input propagation time (high off) tP(IHF) -- 185 500 ns
Input propagation time difference
(all channels turn on)
tPD(an) 20 55 70 ns
Input propagation time difference
(all channels turn off)
tPD(af) -- 11 50 ns
Input propagation time difference
(one channel; high off – low on)
tPD(1hfln) -- 60 150 ns
Input propagation time difference
(one channel; low off – high on)
tPD(1lfhn) -- 80 150 ns
Input propagation time difference
(all channels; high off – low on)
tPD(ahfln) -- 60 150 ns
Input propagation time difference
(all channels; low off – high on)
tPD(alfhn) -- 80 150 ns
DC-Resistance between CH and Bxx pin
I
CH-Bxx
= 50mA; V
VS
= V
Bxx
= GND = 0V
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
RCH-Bxx --
3.3
4.2
6.0
6.3
7.3
8.3
Ω
Boostrap diode forward voltage I
CH-Bxx
= 50mA
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
V
BSD --
0.84
0.73
0.52
1.2
1.0
0.76
V
Datasheet TLE6280GP
14 2007-07-19
Electrical Characteristics
(continued)
Parameter and Conditions Symbol Values Unit
at Tj = –40 … +150 °C, unless otherwise specified
and supply voltage range V
S = 8 ... 20V; f
PWM
= 20kHz;
V
CBxx
>7.5V
min typ max
Diagnosis and Protection Functions
Undervoltage warning at ERR
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
V
Bxx
-V
Sxx
8
8
8
9.4
9.3
9.0
10
10
10
V
Undervoltage shut down of output stage
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
V
Bxx
-V
Sxx
5.5
5.0
4.0
7.2
6.6
5.6
7.5
7.2
7.2
V
Over-temperature warning
11
T
J(OV)
150 170 190 °C
Hysteresis for over-temperature warning ∆T
J(OV)
20 °C
Short circuit protection shut down time delay t
SCP(off)
7 11 15 µs
Short circuit criteria (VDS of Mosfets) @
V
MFP
=3V
12
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
V
DS(SCP)
1.4
--
--
1.85
1.90
1.95
--
--
2.3
V
Factor between V
MFP
and max. V
GXX
@ 2V < V
MFP
< 4V
V
GxxMax
/V
MFP
1.8 2 2.27
Disable input level V
MFP(DIS)
-- -- 1.1 V
Enable input level
13
V
MFP(EN)
2.5 -- -- V
Disable input hysteresis ∆V
MFP(DIS)
-- 500 -- mV
Error level @ 1.6mA I
ERR
V
ERR
-- -- 1.0 V
Shoot through option
Shoot through protection activated VMFP 4V
Shoot through option activated VMFP 4.5 -- -- V
11
specified by design – not subject to production test
12
Periodic short circuit condition will be detected within several cycles, if the duty cycle is more than 10%
13
If the device is enabled, the slope of dU
(VMFP)
/dt has to be higher than 3.5V/50µs
Datasheet TLE6280GP
15 2007-07-19
Electrical Characteristics
(continued)
Parameter and Conditions Symbol Values Unit
at Tj = –40 … +150 °C, unless otherwise specified
and supply voltage range V
S = 8 ... 20V; f
PWM
= 20kHz;
V
CBxx
>7.5V
min typ max
dI /dt limitation
Non reaction level for dI/dt limitation (100% gate
driver capability) @ V
DIDT
>0V
VDIDT 2 -- -- V
Non reaction level for dI/dt limitation (100% gate
driver capability) @ V
DIDT
<0V
VDIDT -- -- -2 V
Max. V
Gxx
at full reaction level for dI/dt limitation @
V
DIDT
= -5V
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
VGxx(DIDT)
--
--
--
1.9
2.3
3.4
3.0
3.0
4.2
V
Min. falltime at full reaction level for dI/dt limitation
@ V
DIDT
= +5V
@ T
J
= -40°C
@ T
J
= +25°C
@ T
J
= +150°C
tfall (DIDT)
20
20
20
65
68
70
--
--
--
µs
Impedance of DIDT Pin to GND
10kHz<f<10MHz; V
DIDT
= 5V
ZDIDT 60 Ω
Default status of input pins:
To assure a defined status of all input pins in case of disconnection, these pins are internally
secured by pull-up or pull-down current sources with approx. 10µA.
The following table shows the default status of each input pin.
Input pin Default status
ILx Low (ext. Mosfet off)
IHx High (ext. Mosfet off)
DIDT Low (no dI/dt limitation)
DT 2µs dead time
MFP Disable (pull-down)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25

TLE6280GPNT

Mfr. #:
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Manufacturer:
Infineon Technologies
Description:
IC MOTOR DRIVER 8V-20V 36DSO
Lifecycle:
New from this manufacturer.
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