Datasheet TLE6280GP
4 2007-07-19
Functional description
General
In the automotive sector there are more and more applications requiring high performance
motor drives, such as electro-hydraulic or electric power steering. In these applications
3-phase motors, synchronous and asynchronous, are used, combining high output perform-
ance, low space requirements and high reliability.
The TLE6280GP is a driver IC dedicated to control the 6 to 12 external Mosfets forming the
converter for high current 3 phase motor drives in the automotive sector. It incorporates fea-
tures like short circuit detection, diagnosis and high output performance and combines it with
typical automotive specific requirements like full functionality even at low battery voltages. Its
3 high-side and 3 low-side output stages are powerful enough to drive Mosfets with 250nC
gate charge with approx. 300ns fall and rise times.
Typical applications are cooling fan, water pump, electro-hydraulic and electric power steer-
ing. The TLE6280GP is designed for a 12V power net.
Use in 24V application is possible as well. Limiting factor could be the power dissipation.
This datasheet describes all functionality of this device. Additional application tips are given
in an application note available on the Internet.
Output stages
The 3 low-side and 3 high-side powerful push-pull output stages are all floating blocks, each
with its own Source pin. This allows the direct connection of the output stage to the Source
of each single Mosfet, allowing a perfect control of each Gate-Source voltage even when
200A are driven in the bridge with rise and fall times clearly below 1µs.
All 6 output stages have the same output power and, due to the use of the bootstrap princi-
ple, they can be switched all up to 30kHz.
Its output stages are powerful enough to drive Mosfets with 250nC gate charge with approx.
300ns fall and rise times, or even to run 12 such Mosfets with fall and rise times of approx.
600ns.
Maximum allowed power dissipation and the need to refresh the bootstrap capacitors with a
minimum refresh pulse limit the divice use for higher frequencies.
Fig. 2 shows the supply structure of TLE6280GP. The bootstrap capacitors are charged by
the charge pump capacitor C
CP
via the CH pin and diodes.
The exact value for this minimum refresh pulse is given by the RC time constant formed by
the impedance between the CH pin and Bxx pin, and the capacitor formed by the external
Mosfet (C
Mosfet
=Q
Gate-total
/ V
GS
). The size of the bootstrap capacitor has to be adapted to the
external Mosfet that the driver IC has to drive. Usually the bootstrap capacitor is about 10-20
times bigger than C
Mosfet
. External components, such as R-C networks, at the Vs Pin have to
be considered, too.
Operation at Vs<12V – integrated charge pump
The TLE6280GP provides a feature tailored to the requirements of 12V automotive applica-
tions. Often the operation of an application has to be assured even at 9V-supply voltage or
lower. Normally bridge driver ICs provide in such conditions clearly less than 9V to the Gate
of the external Mosfet, increasing its RDSon and associated the power dissipation.
The supply structure of the device is shown in fig.2. The TLE 6280GP has a built-in voltage
regulator with charge pump control to generate an internal supply voltage of 13V within a
supply voltage range of 8-40V. Operation below 8V is possible as well and will result in a re-
duced Gate voltage. The charge pump works with an external capacitor C
CP
connected be-
tween the CL and CH pins. It provides more than 13V at the CH pin and guarantees high
supply voltage for the bootstrap capacitors C
Bx
.
Datasheet TLE6280GP
5 2007-07-19
The Input Low-side pins ILx (see Fig. 3) trigger the charge pump. As soon as the first exter-
nal low-side Mosfet is switched on and the corresponding bootstrap capacitor is connected
to GND, the C
CP
is pushed to high and provides about 13V at the CH pin. C
CP
can now di-
rectly feed the low-side output stages and recharge the bootstrap capacitors connected to
GND.
As soon as the first of the 3 external low-side Mosfets is switched off, the C
CP
will be pulled
down to be re-charged.
This synchronous operation with the output stages has the benefit that the electromagnetic
emissions generated by the charge pump can be filtered by the same filter necessary to filter
the EME of the converter itself. At the same time it is assured that the high voltage at the CH
pin is available just in time to charge the high-side bootstrap.
Fig. 3: Trigger timing of charge pump caused by changing input signals
Vreg1 13V
+13 ... +8V
CH
CL
BH
1
BH
2
BH
3
BL
1
BL
2
BL
3
Vreg2=6V
Vreg3 =
Vreg1-8V
Triggered
by ILx
VS
C
CP
C
BH1
C
BL1
Phase A
Phase B
Phase C
= Pin
Bold
line = external component
C
VS
from battery
R
VS
Fig. 2: Supply structure with external components (compare to Fig. 1)
IL1
IL2
Timing of charge pump - Examples
1
2
1. ILx high 1. ILx low
IL3
CH
Charge of bootstrap
capacitors
Charge of charge pump
capacitor
IL2
1. ILx high
1. ILx low
CH
Charge of bootstrap capacitors
IL1
IL3
Charge of charge pump capacitor
Datasheet TLE6280GP
6 2007-07-19
The size of the C
Bxx
and C
CP
capacitors depends upon the gate charge of the Mosfet.
(See “output stages”). C
CP
is usually 6 times larger then C
Bxx
.
Dead Time and Shoot through option.
In bridge applications it has to be assured that the external high-side and low-side Mosfets
are not “on” at the same time, such that the battery voltage is directly connected to GND.
This is usually assured by the integration of delays in a driver IC, generating a so-called
dead time between switching off the external Mosfet and switching on the other Mosfet of the
same half-bridge.
The dead times generated in the TLE6280GP are adjustable. The dead time generated by
the TLE6280GP can be varied from 100ns to 4µs by connecting an external resistor from the
DT pin to GND. The dead time has to be long enough to avoid a short between battery and
GND, while the dead time should be as short as possible to reduce extra power dissipation
in the external Mosfets.
In addition to this adjustable delay, the TLE6280GP provides a locking mechanism, prevent-
ing both external Mosfets of one half-bridge from being switched on at the same time. This
functionality is called shoot through protection.
If the command to switch on both high and low-side switches in the same half-bridge is given
at the input pins, the command will be ignored. (See dead time diagrams, fig. 6-8)
This shoot through protection can be deactivated by setting the MFP-pin to 5V.
Short circuit protection / current limitation
The TLE6280GP provides a short circuit protection for the external Mosfets, by monitoring
the Drain-Source voltage of the external Mosfets. As soon as this voltage is higher than the
short circuit detection limit, the Gate-Source voltage of this Mosfet will be limited to twice the
voltage at the MFP-Pin, providing a current limitation.
The short circuit detection level is dependent upon the voltage of the MFP pin as well (see
diagrams).
After a delay of about 11µs all external Mosfets will be switched off until the driver is reset by
the MFP pin. The error flag is set.
The Drain-Source voltage monitoring of the short circuit detection for certain external Mos-
fets is active as soon as the corresponding input is set to “on” and the dead time is expired.
This feature provides a 2-step switch-on behavior for each regular switching-on of a Mosfet.
Description of MFP pin (Multi functional pin)
The MFP pin has multiple tasks:
1) Reset the device.
2) Adjust the short circuit detection level of the external Mosfet and define the gate voltage
limitation for current limitation in case of short circuit
3) Deactivate the shoot-through protection
Fig 4. shows the internal structure of the MFP pin.
Condition of MFP pin Function
0 – 1.1V Disable the driver. All external Mosfets will be actively
switched off
2.5 – 4.0 V Adjustable short circuit detection level combined with adjust-
able gate voltage limitation for current limitation. Shoot-
through protection is active.
> 4.5V Shoot-through protection deactivated.

TLE6280GPNT

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC MOTOR DRIVER 8V-20V 36DSO
Lifecycle:
New from this manufacturer.
Delivery:
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