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SI8816EDB-T2-E1

P1-P3P4-P6P7-P8
Si8816EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
1
Document Number: 62834
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
Marking Code: xx = AH
xxx = Date/Lot traceability code
Ordering Information:
Si8816EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1700 V (HBM)
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•Load switch
•OVP switch
• High speed switching
•DC/DC converters
• For smart phones, tablet PCs, and
mobile computing
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) Max. I
D
(A)
a
Q
g
(Typ.)
30
0.109 at V
GS
= 10 V 2.3
2.4 nC
0.116 at V
GS
= 4.5 V 2.3
0.123 at V
GS
= 3.7 V 2.2
0.142 at V
GS
= 2.5 V 2.0
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
N-Channel MOSFET
S
D
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
2.3
a
A
T
A
= 70 °C 1.9
a
T
A
= 25 °C 1.5
b
T
A
= 70 °C 1.2
b
Pulsed Drain Current (t = 300 μs) I
DM
8
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
S
0.7
a
T
A
= 25 °C 0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, d
t ≤ 5 s R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
b, e
200 260
Si8816EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
2
Document Number: 62834
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 μA
-30-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
--3.2-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 0.6 - 1.4 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 0.1
μA
V
DS
= 0 V, V
GS
= ± 12 V - - ± 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-State Drain Current
a
I
D(on)
V
DS
≥ 5 V, V
GS
= 10 V 10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 1 A - 0.087 0.109
Ω
V
GS
= 4.5 V, I
D
= 1 A - 0.093 0.116
V
GS
= 3.7 V, I
D
= 1 A - 0.096 0.123
V
GS
= 2.5 V, I
D
= 0.5 A - 0.110 0.142
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 1 A - 10 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
- 195 -
pFOutput Capacitance C
oss
-35-
Reverse Transfer Capacitance C
rss
-15-
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 1 A - 4.4 8
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 1 A
-2.44.5
Gate-Source Charge Q
gs
-0.35-
Gate-Drain Charge Q
gd
-0.55-
Gate Resistance R
g
f = 1 MHz - 4 - Ω
Turn-On Delay Time t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 4.5 V, Rg = 1 Ω
-1530
ns
Rise Time t
r
-2040
Turn-Off Delay Time t
d(off)
-2040
Fall Time t
f
-1020
Turn-On Delay Time t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 1 Ω
-510
Rise Time t
r
-1020
Turn-Off Delay Time t
d(off)
-1530
Fall Time t
f
-510
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - - 0.7
A
Pulse Diode Forward Current I
SM
--8
Body Diode Voltage V
SD
I
S
= 1 A, V
GS
= 0 V - 0.75 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= 1 A, dI/dt = 100 A/μs, T
J
= 25 °C
-1630ns
Body Diode Reverse Recovery Charge Q
rr
-612nC
Reverse Recovery Fall Time t
a
- 13.5 -
ns
Reverse Recovery Rise Time t
b
-2.5-
Si8816EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
3
Document Number: 62834
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 1.5 V
V
GS
= 2 V
V
GS
= 5 V thru 2.5 V
V
GS
= 1 V
0.06
0.09
0.12
0.15
0.18
0 2 4 6 8
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 3.7 V
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 10 V
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
0 3 6 9 12 15 18
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
50
100
150
200
250
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

SI8816EDB-T2-E1

Mfr. #:
Buy SI8816EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
Delivery:
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