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SI8816EDB-T2-E1

P1-P3P4-P6P7-P8
Si8816EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
4
Document Number: 62834
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
0
2
4
6
8
0 1 2 3 4
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 7.5 V
V
DS
= 15 V
I
D
= 1 A
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 10 V, 4.5 V, 3.7 V, 2.5 V; I
D
= 1 A
0.05
0.10
0.15
0.20
0.25
0.30
0 1 2 3 4 5
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 1 A
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0
2
4
6
8
10
12
14
Power (W)
Time (s)
10 10000.10.010.001 1001
Si8816EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
5
Document Number: 62834
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient
Current Derating* Power Derating
Note
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 ms
1 s, 10 ms
100 µs
Limited by R
DS
(
on
)
*
1 ms
T
A
= 25 °C
BVDSS Limited
DC
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
0.0
0.2
0.4
0.6
0.8
25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power Dissipation (W)
Si8816EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. B, 23-Feb-15
6
Document Number: 62834
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62834
.
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 185 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 330 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P8

SI8816EDB-T2-E1

Mfr. #:
Buy SI8816EDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
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