Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
PSMN8R2-80YS,115
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PSMN8R2-80YS_1
© NXP B.V
. 2009. All
rights reserved.
Product data sheet
Rev
. 01 — 25 June 2009
9 of 14
NXP Semiconductors
PSMN8R2-80YS
N-channel LFP
AK 80 V 8.5 m
Ω
st
andard level MOSFET
Fig 13.
Drain-source on-state
resis
tance as a function
of drain current; typical values
Fig 14.
Gate charge wavefo
rm definitions
Fig 15.
Gate-source voltage as a fun
ction of gate
charge; typical values
Fig
16.
Input, output and reverse transfe
r capacitances
as a function of
drain-source voltage
; typical
values
003aad173
5
6
7
8
9
10
03
0
6
0
9
0
I
D
(A)
R
DS
on
(m
Ω
)
8
20
6
10
V
GS
(V) =
5
5.
5
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aad176
0
2
4
6
8
10
02
0
4
0
6
0
Q
G
(n
C)
V
GS
(V)
V
DS
= 40V
64V
16V
003aad177
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(p
F
)
C
iss
C
rs
s
C
os
s
PSMN8R2-80YS_1
© NXP B.V
. 2009. All
rights reserved.
Product data sheet
Rev
. 01 — 25 June 2009
10 of 14
NXP Semiconductors
PSMN8R2-80YS
N-channel LFP
AK 80 V 8.5 m
Ω
st
andard level MOSFET
Fig 17.
So
urce current as a function of sourc
e-drain voltage; typical va
lues
003aad175
0
20
40
60
80
100
0
0.3
0
.6
0
.9
1
.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 150
°
C
T
j
= 175
°
C
PSMN8R2-80YS_1
© NXP B.V
. 2009. All
rights reserved.
Product data sheet
Rev
. 01 — 25 June 2009
1
1 of 14
NXP Semiconductors
PSMN8R2-80YS
N-channel LFP
AK 80 V 8.5 m
Ω
st
andard level MOSFET
7.
Package outline
Fig 18.
Package ou
tline SOT669 (LFP
AK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT669
MO-235
04-10-13
06-03-16
0
2.5
5 mm
scale
e
E
1
b
c
2
A
2
A
2
bc
A
e
UNIT
DIMENSIONS (mm are the original dimensions)
mm
1.10
0.95
A
3
A
1
0.15
0.00
1.20
1.01
0.50
0.35
b
2
4.41
3.62
b
3
2.2
2.0
b
4
0.9
0.7
0.25
0.19
c
2
0.30
0.24
4.10
3.80
6.2
5.8
H
1.3
0.8
L
2
0.85
0.40
L
1.3
0.8
L
1
8
°
0
°
wy
D
(1)
5.0
4.8
E
(1)
3.3
3.1
E
1
(1)
D
1
(1)
max
0.25
4.20
1.27
0.25
0.1
1
23
4
mounting
base
D
1
c
P
lastic single-ended surface-mounted package (LFPAK); 4 leads
SOT66
9
E
b
2
b
3
b
4
H
D
L
2
L
1
A
A
w
M
C
C
X
1/2
e
yC
θ
θ
(A )
3
L
A
A
1
detail X
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
PSMN8R2-80YS,115
Mfr. #:
Buy PSMN8R2-80YS,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
PSMN8R2-80YS,115