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PSMN8R2-80YS,115

P1-P3P4-P6P7-P9P10-P12P13-P15
PSMN8R2-80YS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 25 June 2009 6 of 14
NXP Semiconductors
PSMN8R2-80YS
N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=-55°C 73 - - V
I
D
=250µA; V
GS
=0V; T
j
=25°C 80 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C;
see Figure 10; see Figure 11
1- - V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C;
see Figure 10
; see Figure 11
--4.6V
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C;
see Figure 10
; see Figure 11
234V
I
DSS
drain leakage current V
DS
=80V; V
GS
=0V; T
j
=25°C --4µA
V
DS
=80V; V
GS
=0V; T
j
=125°C --50µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=15A; T
j
= 175 °C;
see Figure 12
--20mΩ
V
GS
=10V; I
D
=15A; T
j
= 100 °C;
see Figure 12
--13.4mΩ
V
GS
=10V; I
D
=15A; T
j
=25°C;
see Figure 13; see Figure 12
-5.88.5mΩ
R
G
internal gate resistance
(AC)
f=1MHz - 0.74 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=0A; V
DS
=0V; V
GS
=10V - 48 - nC
I
D
=25A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
-55-nC
Q
GS
gate-source charge - 15 - nC
Q
GS(th)
pre-threshold
gate-source charge
I
D
=25A; V
DS
=40V; V
GS
=10V;
see Figure 14
-10-nC
Q
GS(th-pl)
post-threshold
gate-source charge
-5-nC
Q
GD
gate-drain charge I
D
=25A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
-12-nC
V
GS(pl)
gate-source plateau
voltage
I
D
=25A; V
DS
=40V; see Figure 15;
see Figure 14
-4.5-V
C
iss
input capacitance V
DS
=40V; V
GS
= 0 V; f = 1 MHz;
T
j
=25°C; see Figure 16
- 3640 - pF
C
oss
output capacitance - 390 - pF
C
rss
reverse transfer
capacitance
- 180 - pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
=1.6Ω; V
GS
=10V;
R
G(ext)
=4.7Ω
-25-ns
t
r
rise time - 22 - ns
t
d(off)
turn-off delay time - 51 - ns
t
f
fall time - 16 - ns
PSMN8R2-80YS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 25 June 2009 7 of 14
NXP Semiconductors
PSMN8R2-80YS
N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET
[1] Tested to JEDEC standards where applicable.
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
- 0.81 1.2 V
t
rr
reverse recovery time I
S
=50A; dI
S
/dt = 100 A/µs; V
GS
=0V;
V
DS
=40V
-55-ns
Q
r
recovered charge - 106 - nC
Table 6. Characteristics
…continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
003aad172
0
20
40
60
80
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
81020 5
4.5
6
V
GS
(V) = 4
003aad178
0
2000
4000
6000
036912
V
GS
(V)
C
(pF)
C
iss
C
rss
003aad174
0
20
40
60
80
0246
V
GS
(V)
I
D
(A)
T
j
= 150
°
C
T
j
= 25
°
C
T
j
= 175
°
C
003aad179
0
20
40
60
80
100
0 20406080
I
D
(A)
g
fs
(S)
PSMN8R2-80YS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 25 June 2009 8 of 14
NXP Semiconductors
PSMN8R2-80YS
N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad180
5
10
15
20
25
0 5 10 15 20
V
GS
(V)
R
DSon
(mΩ)
03aa35
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
T
j
(°C)
−60 180120060
003aad280
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
003aad045
0.0
0.5
1.0
1.5
2.0
2.5
-60 -30 0 30 60 90 120 150 180
T
j
(
°
C)
a
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN8R2-80YS,115

Mfr. #:
Buy PSMN8R2-80YS,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
Lifecycle:
New from this manufacturer.
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