PROPRIETARY AND
CONFIDENTIAL
A
Microchip Technology Company
©2011 Silicon Storage Technology, Inc. DS75010B 09/11
Data Sheet
www.microchip.com
Features
Input/output ports are matched to 50 internally
and DC decoupled.
Packages available
20-contact UQFN – 3mm x 3mm x 0.55mm
All non-Pb (lead-free) devices are RoHS compliant
Transmitter Chain:
High gain:
Typically 28 dB gain across 2.4–2.5 GHz over tempera-
ture -20°C to +85°C for Transmitter.
High linear output power:
Meets 802.11g OFDM ACPR requirement up to 21 dBm
– 3% added EVM up to 19 dBm for 54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22 dBm
High power-added efficiency/Low operating cur-
rent for 802.11b/g/n applications
~25% @ P
OUT
= 22 dBm for 802.11b/g
Low I
REF
power-up/down control
–I
REF
<2 mA
Low quiescent current
~55 mA I
CQ
High-speed power-up/down
Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included
<200 ns
Low shut-down current (~2 µA)
Limited variation over temperature
– ~1 dB power variation between -20°C to +85°C
– ~2 dB gain variation between -20°C to +85°C
Temperature and load insensitive on-chip power
detector
>20 dB dynamic range, temperature-stable, on-chip
power detection
Receiver Chain:
LNA ON:
Typically 12 dB gain
3.1 dB noise figure
>5dB P1dB
Bluetooth Path:
Typically 2.5 dB loss
Simultaneous BT/WLAN Rx mode:
8 dB gain
3.1 dB noise figure
Applications
WLAN (IEEE 802.11b/g/n)
Home RF
Cordless phones
2.4 GHz ISM wireless equipment
Zigbee®
Bluetooth®
2.4 GHz High-Gain, High-Efficiency Front-end Module
SST12LF03
The SST12LF03 is a fully integrated Front-End Module (FEM) for WLAN 802.11b/g/
n and Bluetooth® systems. The SST12LF03 RF modules includes a PA, a LNA,
and an antenna switch, making it ideal for WLAN/BT embedded applications where
small size and high performance are required. Designed in compliance with IEEE
802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the
SST12LF03 operates within the frequency range of 2.4- 2.5 GHz with a very low
DC-current consumption. The Transmitter chain has excellent linearity, typically 3%
added EVM up to 19 dBm output power for 54 Mbps 802.11g operation, while meet-
ing 802.11b spectrum mask at 22 dBm. The receiver chain provides a low noise
amplifier and has options for simultaneous WLAN and Bluetooth operation.The
SST12LF03 is offered in a 20-contact UQFN package.
PROPRIETARY AND
CONFIDENTIAL
©2011 Silicon Storage Technology, Inc. DS75010B 09/11
2
2.4 GHz High-Gain, High-Efficiency Front-end Module
SST12LF03
Data Sheet
A
Microchip Technology Company
Product Description
The SST12LF03 is a 2.4 GHz Front-end Module (FEM) designed in compliance with IEEE 802.11b/g/n
applications. It combines a high-performance Power Amplifier (PA), a low-noise amplifier, and an
antenna switch. The single-pole, three-throw, antenna switch provides WLAN transmit and receive
capability as well as Bluetooth® connectivity. The receive path also allow for simultaneous WLAN and
Bluetooth operation.
The TX chain includes a high-efficiency PA based on the InGaP/GaAs HBT technology. This chain typ-
ically provides 28 dB gain with 25% power-added efficiency (PAE) @ POUT = 22 dBm for 802.11g and
802.11b operation.
The TX chain has excellent linearity, typically 3% added EVM at 19 dBm output power for 54 Mbps
802.11g operation, while meeting 802.11g spectrum mask at 22 dBm.
The SST12LF03 also features easy board-level usage along with high-speed power-up/down controls.
Ultra-low reference current (total I
REF
~2 mA) makes the SST12LF03 controllable directly from the
baseband chip. These features, coupled with low operating current, make the SST12LF03 ideal for the
final stage power amplification in battery-powered 802.11b/g/n WLAN transmitter applications.
The SST12LF03 transmitter has a linear on-chip, single-ended power detector, which is temperature
stable, load insensitive, and has a linear dynamic range greater than 20 dB. The excellent on-chip
power detector provides a reliable solution to board-level power control. In addition, the receiver path
includes an LNA, has the option for simultaneous WLAN and Bluetooth operation, and an optional low-
loss LNA bypass path. In WLAN operating mode, the receiver provides typically 12 dB gain and only
3.1 dB noise figure and >5 dB P1dB. Operating with simultaneous WLAN/BT, the receiver will provide
both the WLAN and Bluetooth ports with 8 dB gain and 3.1 dB noise figure.
All input/output RF ports are single-ended, DC blocked, and internally matched to 50 No external
DC-blocking capacitors or matching components are necessary. This helps reduce the system board
Bill of Materials (BOM) cost.
The SST12LF03 is offered in a 20-contact UQFN package. See Figure 2 for pin assignments and Table
1 for pin descriptions.
PROPRIETARY AND
CONFIDENTIAL
©2011 Silicon Storage Technology, Inc. DS75010B 09/11
3
2.4 GHz High-Gain, High-Efficiency Front-end Module
SST12LF03
Data Sheet
A
Microchip Technology Company
Functional Blocks
Figure 1: Functional Block Diagram
20
75010 B1.1
DNC
TX
GND
RX
BT
DNC
SRX
DNC
STX
SREF
VCC2
LEN
PEN
VCC1
DET
ANT
SBT
SBTR
CND
VCC3
19 18 17 16
6
78910
11
12
13
14
15
5
4
3
2
1

SST12LF03-Q3DE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
RF Front End WLAN 11B/G/N FEM PA+LNA+SPDT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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