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ADG1408YCPZ-REEL7

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
4 Ω R
ON
, 4-/8-Channel,
±15 V/+12 V/±5 V iCMOS Multiplexers
Data Sheet
ADG1408/ADG1409
Rev. D Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700 ©2006–2016 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
4.7 Ω maximum on resistance at 25°C
0.5 Ω on-resistance flatness
Up to 190 mA continuous current
Fully specified at ±15 V/+12 V/±5 V
3 V logic-compatible inputs
Rail-to-rail operation
Break-before-make switching action
16-lead TSSOP and 4 mm × 4 mm LFCSP
APPLICATIONS
Relay replacement
Audio and video routing
Automatic test equipment
Data acquisition systems
Temperature measurement systems
Avionics
Battery-powered systems
Communication systems
Medical equipment
FUNCTIONAL BLOCK DIAGRAMS
ADG1408
S1
S8
D
ADG1409
S1A
S4B
DA
DB
S4A
S1B
1-OF-4
DECODER
1-OF-8
DECODER
A0 A1 ENA0 A1 A2 EN
04861-001
Figure 1.
GENERAL DESCRIPTION
The ADG1408/ADG1409 are monolithic iCMOS® analog multip-
lexers comprising eight single channels and four differential
channels, respectively. The ADG1408 switches one of eight
inputs to a common output, as determined by the 3-bit binary
address lines, A0, A1, and A2. The ADG1409 switches one of
four differential inputs to a common differential output, as
determined by the 2-bit binary address lines, A0 and A1. An EN
input on both devices is used to enable or disable the device.
When disabled, all channels are switched off.
The industrial CMOS (iCMOS) modular manufacturing process
combines high voltage complementary metal-oxide semiconductor
(CMOS) and bipolar technologies. It enables the development
of a wide range of high performance analog ICs capable of 33 V
operation in a footprint that no other generation of high voltage
devices has been able to achieve. Unlike analog ICs using
conventional CMOS processes, iCMOS components can tolerate
high supply voltages while providing increased performance,
dramatically lower power consumption, and reduced package size.
The ultralow on resistance and on resistance flatness of these
switches make them ideal solutions for data acquisition and
gain switching applications where low distortion is critical.
iCMOS construction ensures ultralow power dissipation,
making the devices ideally suited for portable and battery-
powered instruments.
PRODUCT HIGHLIGHTS
1. 4 Ω on resistance.
2. 0.5 Ω on-resistance flatness.
3. 3 V logic compatible digital input, V
IH
= 2.0 V, V
IL
= 0.8 V.
4. 16-lead TSSOP and 4 mm × 4 mm LFCSP.
Table 1. Related Devices
Device No. Description
ADG1208/ADG1209
Low capacitance, low charge injection,
and low leakage 4-/8-channel ±15 V
multiplexers
ADG1408/ADG1409 Data Sheet
Rev. D | Page 2 of 19
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagrams ............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
15 V Dual Supply .......................................................................... 3
12 V Single Supply ........................................................................ 5
5 V Dual Supply ............................................................................ 7
Continuous Current per channel, S or D ...................................8
Absolute Maximum Ratings ............................................................9
Thermal Resistance .......................................................................9
ESD Caution...................................................................................9
Pin Configurations and Function Descriptions ......................... 10
Typical Performance Characteristics ........................................... 12
Terminology .................................................................................... 16
Test Circuits ..................................................................................... 17
Outline Dimensions ....................................................................... 19
Ordering Guide .......................................................................... 19
REVISION HISTORY
6/2016—Rev. C to Rev. D
Changes to Analog Inputs Parameter, Table 6 .............................. 9
Added Digital Inputs Parameter, Table 6 ...................................... 9
5/2016—Rev. B to Rev. C
Changed CP-16-13 to CP-16-26 .................................. Throughout
Changes to Figure 3 ........................................................................ 10
Changes to Figure 5 ........................................................................ 11
Updated Outline Dimensions ....................................................... 19
Changes to Ordering Guide .......................................................... 20
3/2009—Rev. A to Rev. B
Change to I
DD
Parameter, Table 2 ................................................... 4
Change to I
DD
Parameter, Table 3 ................................................... 6
8/2008—Rev. 0 to Rev. A
Changes to Features .......................................................................... 1
Added Table 5; Renumbered Sequentially .................................... 8
Changes to Table 6 ............................................................................ 9
Added Exposed Pad Notation to Figure 3 ................................... 10
Added Exposed Pad Notation to Figure 5 ................................... 11
Added Exposed Pad Notation to Outline Dimensions ............. 19
8/2006—Revision 0: Initial Version
Data Sheet ADG1408/ADG1409
Rev. D | Page 3 of 19
SPECIFICATIONS
15 V DUAL SUPPLY
V
DD
= +15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter +25°C
−40°C to
+85°C
−40°C to
+125°C
1
Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V
On Resistance (R
ON
) 4 Ω typ V
S
= ±10 V, I
S
= −10 mA; see Figure 26
4.7 5.7 6.7 Ω max V
DD
= +13.5 V, V
SS
= −13.5 V
On Resistance Match Between
Channels (ΔR
ON
)
0.2 Ω typ V
S
= ±10 V, I
S
= −10 mA
0.78 0.85 1.1 Ω max
On-Resistance Flatness (R
FLAT(ON)
) 0.5 Ω typ V
S
= ±10 V, I
S
= −10 mA
0.72 0.77 0.92 Ω max
LEAKAGE CURRENTS V
DD
= +16.5 V, V
SS
= −16.5 V
Source Off Leakage, I
S
(Off) ±0.04 nA typ
V
S
= ±10 V, V
D
= ∓10 V; see Figure 27
±0.2 ±0.6 ±5 nA max
Drain Off Leakage, I
D
(Off) ±0.04 nA typ
V
S
= ±10 V, V
D
= ∓10 V; see Figure 27
±0.45 ±2 ±30 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.1 nA typ V
S
= V
D
= ±10 V; see Figure 28
±1.5 ±3 ±30 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.0 V min
Input Low Voltage, V
INL
0.8 V max
Input Current ±0.005 μA typ V
IN
= V
GND
or V
DD
±0.1 μA max
Digital Input Capacitance, C
IN
4 pF typ
DYNAMIC CHARACTERISTICS
2
Transition Time, t
TRANSITION
140 ns typ R
L
= 100 Ω, C
L
= 35 pF
170 210 240 ns max V
S
= 10 V, see Figure 29
Break-Before-Make Time Delay, t
BBM
50 ns typ R
L
= 100 Ω, C
L
= 35 pF
30 ns min V
S1
= V
S2
= 10 V; see Figure 30
t
ON
(EN) 100 ns typ R
L
= 100 Ω, C
L
= 35 pF
120 150 165 ns max V
S
= 10 V; see Figure 31
t
OFF
(EN) 100 ns typ R
L
= 100 Ω, C
L
= 35 pF
120 150 170 ns max V
S
= 10 V; see Figure 31
Charge Injection −50 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 32
Off Isolation −70 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 33
Channel-to-Channel Crosstalk −70 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 34
Total Harmonic Distortion Plus
Noise (THD + N)
0.025 % typ
R
L
= 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz;
see Figure 36
−3 dB Bandwidth R
L
= 50 Ω, C
L
= 5 pF; see Figure 35
ADG1408 60 MHz typ
ADG1409 115 MHz typ
Insertion Loss 0.24 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 35
C
S
(Off) 14 pF typ f = 1 MHz
C
D
(Off) f = 1 MHz
ADG1408 80 pF typ
ADG1409 40 pF typ
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

ADG1408YCPZ-REEL7

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Manufacturer:
Analog Devices Inc.
Description:
Multiplexer Switch ICs 8:1 60MHz 4 Ohm iCMOS
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