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IRG7PH28UD1PBF

P1-P3P4-P6P7-P9P10-P10
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
1 www.irf.com © 2012 International Rectifier January 8, 2013
IRG7PH28UD1PbF
TO-247AC
G
C
E
G
G
C
E
G
IRG7PH28UD1MPbF
TO-247AD
G C E
Gate Collector Emitter
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG7PH28UD1PbF
TO-247AC Tube 25
IRG7PH28UD1PbF
IRG7PH28UD1MPbF
TO-247AD Tube 25
IRG7PH28UD1MPbF
V
CES
= 1200V
I
C
= 15A, T
C
= 100°C
T
J(MAX)
= 150°C
V
CE(ON)
typ. = 1.95V
E
G
n-channel
C
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
 Low V
CE (ON)
trench IGBT technology
 Low switching losses
 Square RBSOA
 Ultra-low V
F
diode
 1300Vpk repetitive transient capacity
 100% of the parts tested for I
LM
 Positive V
CE (ON)
temperature co-efficient
 Tight parameter distribution
 Lead-free package
Benefits
 Device optimized for induction heating and soft switching
applications
 High efficiency due to low V
CE(ON)
, low switching losses and
ultra-low V
F
 Rugged transient performance for increased reliability
 Excellent current sharing in parallel operation
 Low EMI
Absolute Maximum Ratings

Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current 30
I
C
@ T
C
= 100°C Continuous Collector Current 15
I
CM
Pulse Collector Current, V
GE
= 15V  100
I
LM
Clamped Inductive Load Current, V
GE
= 20V 60
A
I
F
@ T
C
= 25°C Diode Continuous Forward Current 30
I
F
@ T
C
= 100°C Diode Continuous Forward Current 15
I
FM
Diode Maximum Forward Current 60
V
GE
Continuous Gate-to-Emitter Voltage ±30 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 115 W
P
D
@ T
C
= 100°C Maximum Power Dissipation 46
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300
(0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
V
(BR) Transient
Repetitive Transient Collector-to-Emitter Voltage 1300
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
2 www.irf.com © 2012 International Rectifier January 8, 2013
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 100µA
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
— 1.4 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.95 2.30 V I
C
= 15A, V
GE
= 15V, T
J
= 25°C
— 2.4 —
I
C
= 15A, V
GE
= 15V, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 350µA
gfe Forward Transconductance — 13 — S V
CE
= 50V, I
C
= 15A, PW = 20µs
I
CES
Collector-to-Emitter Leakage Current — 1.0 100 µA V
GE
= 0V, V
CE
= 1200V

— 100 —
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.1 1.2 V I
F
= 15A
— 1.0 —
I
F
= 15A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±30V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 60 90 I
C
= 15A
Q
ge
Gate-to-Emitter Charge (turn-on) — 10 15
nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 27 40
V
CC
= 600V
E
off
Turn-Off Switching Loss — 543 766 µJ I
C
= 15A, V
CC
= 600V, V
GE
= 15V
R
G
= 22, L = 1.0mH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 229 — ns
Energy losses include tail & diode
t
f
Fall time — 62 —
reverse recovery
E
off
Turn-Off Switching Loss — 939 — µJ I
C
= 15A, V
CC
= 600V, V
GE
=15V
R
G
= 22, L = 1.0mH, T
J
= 150°C
t
d(off)
Turn-Off delay time — 272 — ns
Energy losses include tail & diode
t
f
Fall time — 167 —
reverse recovery
C
ies
Input Capacitance — 1160 — V
GE
= 0V
C
oes
Output Capacitance — 55 —
pF V
CC
= 30V
C
res
Reverse Transfer Capacitance — 30 —
f = 1.0Mhz
T
J
= 150°C, I
C
= 60A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 960V, Vp ≤ 1200V
Rg = 22, V
GE
= +20V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 25µH, R
G
= 22.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
is measured at T
J
of approximately 90°C.
FBSOA operating conditions only.
V
GE
= 0V, T
J
= 75°C, PW ≤ 10µs.
Thermal Resistance

Parameter Min. Typ. Max. Units
R
θJC
(IGBT) Junction-to-Case (IGBT) ––– ––– 1.09
R
θJC
(Diode) Junction-to-Case (Diode) ––– ––– 1.35
°C/W
R
θCS
Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θJA
Junction-to-Ambient (typical socket mount) ––– ––– 40
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
3 www.irf.com © 2012 International Rectifier January 8, 2013
25 50 75 100 125 150
T
C
(°C)
0
5
10
15
20
25
30
I
C
(
A
)
25 50 75 100 125 150
T
J
, Temperature (°C)
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
V
G
E
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
I
C
= 350µA
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000 10000
V
CE
(V)
1
10
100
I
C
(
A
)
0 2 4 6 8 10
V
CE
(V)
0
10
20
30
40
50
60
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
Fig. 4 - Reverse Bias SOA
T
J
= 150°C; VGE = 20V
25 50 75 100 125 150
T
C
(°C)
0
20
40
60
80
100
120
P
t
o
t
(
W
)
Fig. 2 - Power Dissipation vs.
Case Temperature
0 2 4 6 8 10
V
CE
(V)
0
10
20
30
40
50
60
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
Fig. 3 - Typical Gate Threshold Voltage
vs. Junction Temperature
Fig. 6 - Typ. IGBT Output Characteristics
T
J = 25°C; tp = 20µs
Fig. 5 - Typ. IGBT Output Characteristics
T
J = -40°C; tp = 20µs
P1-P3P4-P6P7-P9P10-P10

IRG7PH28UD1PBF

Mfr. #:
Buy IRG7PH28UD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V UltraFast Discrete IGBT
Lifecycle:
New from this manufacturer.
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