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IRG7PH28UD1PBF

P1-P3P4-P6P7-P9P10-P10
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
4 www.irf.com © 2012 International Rectifier January 8, 2013
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
F
(V)
0.1
1
10
100
I
F
(
A
)
25°C
150°C
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
0 2 4 6 8 10
V
CE
(V)
0
10
20
30
40
50
60
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
5101520
V
GE
(V)
0
2
4
6
8
10
12
V
C
E
(
V
)
I
CE
= 7.5A
I
CE
= 15A
I
CE
= 30A
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 20µs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
5101520
V
GE
(V)
0
2
4
6
8
10
12
V
C
E
(
V
)
I
CE
= 7.5A
I
CE
= 15A
I
CE
= 30A
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
456789101112
V
GE
(V)
0
10
20
30
40
50
60
70
I
C
E
(
A
)
T
J
= 150°C
T
J
= 25°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
5101520
V
GE
(V)
0
2
4
6
8
10
12
V
C
E
(
V
)
I
CE
= 7.5A
I
CE
= 15A
I
CE
= 30A
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 150°C
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
5 www.irf.com © 2012 International Rectifier January 8, 2013
0 5 10 15 20 25 30
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
td
OFF
t
F
0 20 40 60 80 100
R
G
(
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
td
OFF
t
F
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, R
G
= 22; V
GE
= 15V
0 5 10 15 20 25 30
I
C
(A)
0
400
800
1200
1600
2000
E
n
e
r
g
y
(
µ
J
)
E
OFF
0 20406080100
Rg (
)
800
1000
1200
1400
1600
1800
E
n
e
r
g
y
(
µ
J
)
E
OFF
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
=
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, R
G
= 22; V
GE
= 15V
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 150°C; L = 1.0mH; V
CE
= 600V, I
CE
= 15A; V
GE
= 15V
0 100 200 300 400 500 600
V
CE
(V)
1
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
Fig. 17 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 10203040506070
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 600V
V
CES
= 400V
Fig. 18 - Typical Gate Charge vs. V
GE
I
CE
= 15A
IRG7PH28UD1PbF/IRG7PH28UD1MPbF
6 www.irf.com © 2012 International Rectifier January 8, 2013
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Ri (°C/W)
i (sec)
0.00756 0.000005
0.56517 0.000677
0.54552 0.003514
0.25085 0.019551
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W)
i (sec)
0.015352 0.000008
0.360775 0.000223
0.431394 0.002475
0.282479 0.01715
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
P1-P3P4-P6P7-P9P10-P10

IRG7PH28UD1PBF

Mfr. #:
Buy IRG7PH28UD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V UltraFast Discrete IGBT
Lifecycle:
New from this manufacturer.
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