Nexperia
BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
4 / 14
aaa-026538
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.75
0.50
0.33
0.20
0.10
0.05
FR4 PCB, standard footprint
Figure 2. Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10 Electrical characteristics
Table 7. Electrical characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= 40 V; I
E
= 0 A - - 20 nAI
CBO
collector-base
cut-off current
V
CB
= 40 V; I
E
= 0 A; T
j
= 150 °C - - 5 μA
I
EBO
emitter-base
cut-off current
V
EB
= 5 V; I
C
= 0 A - - 20 nA
DC current gain
BCW66F/G/H V
CE
= 1 V; I
C
= 100 μA 75 - -
BCW66F/G/H V
CE
= 1 V; I
C
= 1 mA 75 - -
BCW66F/G/H V
CE
= 1 V; I
C
= 10 mA 75 - -
BCW66F
[1]
100 - 250
BCW66G
[1]
160 - 400
BCW66H
V
CE
= 1 V; I
C
= 100 mA
[1]
250 - 630
h
FE
BCW66F/G/H V
CE
= 1 V; I
C
= 500 mA
[1]
40 - -
I
C
= 100 mA; I
B
= 10 mA
[1]
- - 350 mVV
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
- - 450 mV
I
C
= 100 mA; I
B
= 10 mA
[1]
- - 1.25 VV
BEsat
base-emitter
saturation voltage
I
C
= 500 mA; I
B
= 50 mA
[1]
- - 1.25 V
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz 100 - - MHz
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz - 3 - pF
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02
