Nexperia
BCW66 series
45 V, 800 mA NPN general-purpose transistor
BCW66x_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
8 / 14
V
CE
(V)
0 542 31
006aaa141
0.4
0.8
1.2
I
C
(A)
0
(7)
(8)
(9)
(10)
(1)(2)(3)(4)(5)(6)
T
amb
= 25 °C
(1) I
B
= 13.0 mA
(2) I
B
= 11.7 mA
(3) I
B
= 10.4 mA
(4) I
B
= 9.1 mA
(5) I
B
= 7.8 mA
(6) I
B
= 6.5 mA
(7) I
B
= 5.2 mA
(8) I
B
= 3.9 mA
(9) I
B
= 2.6 mA
(10) I
B
= 1.3 mA
Figure 13. BCW66G: Collector current as a function of
collector-emitter voltage; typical values
V
CE
(V)
0 542 31
006aaa142
0.4
0.8
1.2
I
C
(A)
0
(7)
(8)
(9)
(10)
(1)(2)(3)(4)(5)(6)
T
amb
= 25 °C
(1) I
B
= 12.0 mA
(2) I
B
= 10.8 mA
(3) I
B
= 9.6 mA
(4) I
B
= 8.4 mA
(5) I
B
= 7.2 mA
(6) I
B
= 6.0 mA
(7) I
B
= 4.8 mA
(8) I
B
= 3.6 mA
(9) I
B
= 2.4 mA
(10) I
B
= 1.2 mA
Figure 14. BCW66H: Collector current as a function of
collector-emitter voltage; typical values
11 Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
