AOD1N60/AOU1N60/AOI1N60
Symbol Min Typ Max Units
600
700
BV
DSS
/∆TJ
0.6
V/
o
C
1
10
I
GSS
Gate-Body leakage current
100
nΑ
V
GS(th)
Gate Threshold Voltage
3 4.1 4.5 V
R
DS(ON)
7.5 9 Ω
g
FS
0.9 S
V
SD
0.65 1 V
I
S
Maximum Body-Diode Continuous Current 1 A
I
SM
4 A
C
iss
105 130 160 pF
C
oss
12 14.5 18 pF
C
rss
1.5 1.8 2.2 pF
R
g
2.9 3.5 5.3 Ω
Q
g
6.1 8 nC
Q
gs
1.3 2 nC
Q
gd
3.1 4 nC
t
D(on)
10 13 ns
t
r
6.7 13 ns
µA
V
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=0.65A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
BV
DSS
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,I
D
=250µA
V
DS
=480V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=0.65A
Forward Transconductance
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
Turn-On Rise Time
V
GS
=10V, V
DS
=300V, I
D
=1A,
R
=25Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=1A
Turn-On DelayTime
Gate Source Charge
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Diode Forward Voltage
V
DS
=0V, V
GS
=±30V
t
f
11.5 23 ns
t
rr
114 137
ns
Q
rr
0.63 0.76
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=1.3A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Charge
I
F
=1.3A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=1A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C
Rev 5: Aug 2011 www.aosmd.com Page 2 of 6
