AOU1N60

AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 2 4 6 8
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=480V
I
D
=1A
1
10
100
1000
0.1 1 10 100
Capacitance (pF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
rss
0.01
0.1
1
10
1 10 100 1000
I
D
(Amps)
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
0
200
400
600
800
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
T
J(Max)
=150°C
T
C
=25°C
Operating Area (Note F)
Case (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.8C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev 5: Aug 2011 www.aosmd.com Page 4 of 6
AOD1N60/AOU1N60/AOI1N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
0 25 50 75 100 125 150
Power Dissipation (W)
T
CASE
(°C)
Figure 12: Power De-rating (Note B)
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
Current rating I
D
(A)
T
CASE
(°C)
Figure 13: Current De-rating (Note B)
0
100
200
300
400
0.0001 0.001 0.01 0.1 1 10 100 1000
Power (W)
Pulse Width (s)
T
J(Max)
=150°C
T
A
=25°C
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
Rev 5: Aug 2011 www.aosmd.com Page 5 of 6
AOD1N60/AOU1N60/AOI1N60
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Res istive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
L
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Vds
Id
Vgs
BV
I
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev 5: Aug 2011 www.aosmd.com Page 6 of 6

AOU1N60

Mfr. #:
Manufacturer:
Description:
MOSFET N-CH 600V 1.3A TO251
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet