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VS-VSKJ250-16PBF

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-May-14
1
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This new VS-VSK series of MAGN-A-PAKs uses
high voltage power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).
PRODUCT SUMMARY
I
F(AV)
250 A to 320 A
Type Modules - Diode, High Voltage
Package MAGN-A-PAK
Circuit Two diodes doubler circuit
MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS
I
F(AV)
250 270 320 A
T
C
100 100 100 °C
I
F(RMS)
393 424 502
A
I
FSM
50 Hz 7015 8920 10 110
60 Hz 7345 9430 10 580
I
2
t
50 Hz 246 398 511
kA
2
s
60 Hz 225 363 466
I
2
t 2460 3980 5110 kA
2
s
V
RRM
400 to 3000 V
T
J
-40 to +150 °C
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-May-14
2
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT 150 °C
mA
VS-VSK.250
VS-VSK.270
VS-VSK.320
04 400 500
50
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
VS-VSK.270 30 3000 3100
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.250 VSK.270 VSK.320 UNITS
Maximum average forward
current at case temperature
I
F(AV)
180° conduction, half sine wave
250 270 320 A
100 100 100 °C
Maximum RMS forward current I
F(RMS)
As AC switch 393 424 502
A
Maximum peak, one-cycle
forward, non-repetitive
surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
7015 8920 10 110
t = 8.3 ms 7345 9340 10 580
t = 10 ms
100 % V
RRM
reapplied
5900 7500 8500
t = 8.3 ms 6180 7850 8900
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
246 398 511
kA
2
s
t = 8.3 ms 225 363 466
t = 10 ms
100 % V
RRM
reapplied
174 281 361
t = 8.3 ms 159 257 330
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA
2
s
Low level value of
threshold voltage
V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
= T
J
maximum
0.79 0.74 0.69
V
High level value of
threshold voltage
V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.92 0.87 0.86
Low level forward
slope resistance
r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
= T
J
maximum
0.63 0.94 0.59
m
High level forward
slope resistance
r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.49 0.81 0.44
Maximum forward voltage drop V
FM
I
FM
= x I
F(AV)
, T
J
= T
J
maximum, 180° conduction
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
1.29 1.48 1.28 V
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse
leakage current
I
RRM
T
J
= 150 °C 50 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-May-14
3
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
VSK.250 VSK.270 VSK.320
Maximum junction operating and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case per junction
R
thJC
DC operation 0.16 0.125
K/W
Maximum resistance, case to heatsink
per module
R
thCS
Mounting surface flat, smooth and
greased
0.035
Mounting torque
± 10 %
MAP to heatsink
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.
4 to 6
Nm
busbar to MAP 8 to 10
Approximate weight
800 g
30 oz.
Case style MAGN-A-PAK
R CONDUCTION PER JUNCTION
DEVICE
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.250 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033
K/WVSK.270 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
VSK.320 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-VSKJ250-16PBF

Mfr. #:
Buy VS-VSKJ250-16PBF
Manufacturer:
Vishay Semiconductors
Description:
Discrete Semiconductor Modules 1600volt 250amp
Lifecycle:
New from this manufacturer.
Delivery:
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