VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-May-14
10
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 29 - Forward Power Loss Characteristics
Fig. 30 - Maximum Non-Repetitive Surge Current
Fig. 31 - Maximum Non-Repetitive Surge Current
Fig. 32 - Forward Voltage Drop Characteristics
Fig. 33 - Thermal Impedance Z
thJC
Characteristics
0 25 50 75 100 125 150
0
.
0
4
K
/
W
0
.
0
5
K
/
W
0
.
0
6
K
/
W
0
.
1
2
K
/
W
0
.
3
K
/
W
0
.
6
K
/
W
Maximum Allowable Ambient TemperatureC)
0.
0
3
K
/W
R
=
0
.
0
2
K
/
W
-
D
e
l
t
a
R
0
.
2
K
/
W
0
.
0
8
K
/
W
t
h
S
A
0
400
800
1200
1600
2000
2400
2800
0 200 400 600 800 1000
120°
(Rect)
Total Output Current (A)
M a x im u m To t a l Po w e r Lo ss ( W )
3 x VSK.320.. Series
Three Phase Bridge
Connected
T = 15 0 ° C
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
110100
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
VSK.320.. Se ries
Pe r Ju nc t io n
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Ra ted V App lied Fo llowing Surge.
RRM
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Initia l T = 15C
No Voltage Reapplied
Ra t e d V Re a p p l ie d
Versus Pulse Train Duration.
RRM
J
VSK.320.. Series
Pe r Jun c t io n
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5° C
J
Instantaneous Forward Current (A)
In st a n t a n e o u s Fo rw a rd V o lt a g e ( V)
VSK.320.. Series
Pe r Ju nc t io n
T = 1 5 0 ° C
J
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
Transient T
hermal Impedanc e Z (K/W)
VSK.320.. Series
Pe r Ju n c t io n
St e a d y St a t e V a l u e :
R = 0. 45 K/ W
(DC Operation)
thJC
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-May-14
11
Document Number: 93581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
Two diodes doubler circuit KD
Two diodes common cathodes KC
Two diodes common anodes KJ
Single diode KE
2
1 - Vishay Semiconductors product
- Lead (Pb)-free
3
- Circuit configuration (see Circuit Configuration table)
4
- Current rating: I
F(AV)
rounded
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
Device code
21 43 5
KDVS-VS 320 - 24 PbF
VSKD...
+
-
~
~
-
+
VSKC...
+
--
+
-
-
VSKJ...
-++
-
+
+
VSKE...
+-
+-
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
Document Number: 95086 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 03-Aug-07 1
MAGN-A-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
Notes
Dimensions are nominal
Full engineering drawings are available on request
UL identification number for gate and cathode wire: UL 1385
UL identification number for package: UL 94 V-0
Ø 5.5
6
(0.24)
38 (1.5)
50 (1.97)
6 (0.24)
115 (4.53)
80 (3.15)
9 (0.35)
20 (0.79)
3 screws M8 x 1.25
35 (1.38) 28 (1.12)
32
(1.26)
HEX 13
10 (0.39)
92 (3.62)
51 (2.01)
52 (2.04)

VS-VSKJ250-16PBF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Discrete Semiconductor Modules 1600volt 250amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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