CMOS, ±5 V/+5 V,
4 Ω, Single SPDT Switches
ADG619/ADG620
Rev. C
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FEATURES
6.5 Ω (maximum) on resistance
0.8 Ω (maximum) on-resistance flatness
2.7 V to 5.5 V single supply
±2.7 V to ±5.5 V dual supply
Rail-to-rail operation
8-lead SOT-23, 8-lead MSOP
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
APPLICATIONS
Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avionics
Relay replacement
Battery-powered systems
FUNCTIONAL BLOCK DIAGRAM
IN
ADG619/ADG620
S2
S1
D
NOTES
1. SWITCHES SHOWN FOR
A LOGIC 1 INPUT.
02617-001
Figure 1.
GENERAL DESCRIPTION
The ADG619/ADG620 are monolithic, CMOS single-pole
double-throw (SPDT) switches. Each switch conducts equally
well in both directions when the device is on.
The ADG619/ADG620 offer a low on resistance of 4 Ω, which
is matched to within 0.7 Ω between channels. These switches
also provide low power dissipation, yet result in high switching
speeds. The ADG619 exhibits break-before-make switching
action, thus preventing momentary shorting when switching
channels. The ADG620 exhibits make-before-break action.
The ADG619/ADG620 are available in an 8-lead SOT-23 and
an 8-lead MSOP.
PRODUCT HIGHLIGHTS
1. Low on resistance (R
ON
): 4 Ω typical.
2. Dual ±2.7 V to ±5.5 V or single 2.7 V to 5.5 V supplies.
3. Low power dissipation.
4. Fast t
ON
/t
OFF
.
5. Tiny, 8-lead SOT-23 and 8-lead MSOP.
Table 1. Truth Table for the ADG619/ADG620
IN Switch S1 Switch S2
0 On Off
1 Off On
ADG619/ADG620
Rev. C | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Dual Supply ................................................................................... 3
Single Supply ................................................................................. 5
Absolute Maximum Ratings ............................................................6
ESD Caution...................................................................................6
Pin Configurations and Function Descriptions............................7
Typical Performance Characteristics ..............................................8
Terminology .................................................................................... 10
Test Circuits..................................................................................... 11
Outline Dimensions ....................................................................... 13
Ordering Guide............................................................................... 14
REVISION HISTORY
3/07—Rev. B to Rev. C
Changes to Specifications................................................................ 3
1/06—Rev. A to Rev. B
Changes to R
ON
Values in Table 2 ................................................... 2
Updated Outline Dimensions....................................................... 13
Changes to Ordering Guide .......................................................... 13
6/03—Rev. 0 to Rev. A.
Edits to Specifications ...................................................................... 2
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions......................................................... 8
ADG619/ADG620
Rev. C | Page 3 of 16
SPECIFICATIONS
DUAL SUPPLY
V
DD
= +5 V ± 10%, V
SS
= −5 V ± 10%, GND = 0 V. All specifications −40°C to +85°C, unless otherwise noted.
Table 2.
B Version
1
Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range V
SS
to V
DD
V V
DD
= +4.5 V, V
SS
= −4.5 V
On Resistance (R
ON
) 4 Ω typ V
S
= ±4.5 V, I
DS
= −10 mA; see Figure 15
6.5 8.5 Ω max
R
ON
Match Between Channels (∆R
ON
) 0.7 Ω typ V
S
= ±4.5 V, I
DS
= −10 mA
1.1 1.35 Ω max
On-Resistance Flatness (R
FLAT
(ON)
) 0.7 0.8 Ω typ V
S
= ±3.3 V, I
DS
= −10 mA
1.35 1.4 Ω max
LEAKAGE CURRENTS V
DD
= +5.5 V, V
SS
= −5.5 V
Source Off Leakage, I
S
(Off)
±0.01
nA typ
V
S
= ±4.5 V, V
D
=
4.5 V; see Figure 16
±0.25 ±1 nA max
Channel On Leakage, I
D
, I
S
(On) ±0.01 nA typ V
S
= V
D
= ±4.5 V; see Figure 17
±0.25 ±1 nA max
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 V min
Input Low Voltage, V
INL
0.8 V max
Input Current, I
INL
or I
INH
0.005 µA typ V
IN
= V
INL
or V
INH
±0.1 A max
Digital Input Capacitance, C
IN
2 pF typ
DYNAMIC CHARACTERISTICS
2
ADG619
t
ON
80 ns typ R
L
= 300 Ω, C
L
= 35 pF
120 155 ns max V
S
= 3.3 V; see Figure 18
t
OFF
45 ns typ R
L
= 300 Ω, C
L
= 35 pF
75 90 ns max V
S
= 3.3 V; see Figure 18
Break-Before-Make Time Delay, t
BBM
40 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S1
= V
S2
= 3.3 V; see Figure 19
ADG620
t
ON
40 ns typ R
L
= 300 Ω, C
L
= 35 pF
65 85 ns max V
S
= 3.3 V; see Figure 18
t
OFF
200 ns typ R
L
= 300 Ω, C
L
= 35 pF
330 400 ns max V
S
= 3.3 V; see Figure 18
Make-Before-Break Time Delay, t
MBB
160 ns typ R
L
= 300 Ω, C
L
= 35 pF
10 ns min V
S
= 0 V; see Figure 20
Charge Injection 110 pC typ V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 21
Off Isolation −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 22
Channel-to-Channel Crosstalk −67 dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 23
Bandwidth −3 dB 190 MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
C
S
(Off) 25 pF typ f = 1 MHz
C
D
, C
S
(On) 95 pF typ f = 1 MHz

ADG619BRTZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 4 Ohm 5.5V CMOS SGL SPDT
Lifecycle:
New from this manufacturer.
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