IXTP36P15P Datasheet IXTP36P15P, IXTQ36P15P, IXTA36P15P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C - 150 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ - 150 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C - 36 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

- 90 A

I

A

T

C

= 25°C - 36 A

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 10 V/ns

P

D

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting Force (TO-263) 10..65/2.2..14.6 N/lb.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-3P 5.5 g

TO-247 6.0 g

DS99791D(01/13)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= - 250 μA - 150 V

V

GS(th)

V

DS

= V

GS

, I

D

= - 250μA - 2.5 - 4.5 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V -10 μA

T

J

= 125°C - 250 μA

R

DS(on)

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note 1 110 mΩ

PolarP

TM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA36P15P

IXTP36P15P

IXTQ36P15P

IXTH36P15P

V

DSS

= - 150V

I

D25

= - 36A

R

DS(on)

≤≤

≤ 110m

ΩΩ

Ω

Features

z

International Standard Packages

z

Rugged PolarP

TM

Process

z

Avalanche Rated

z

Low Package Inductance

z

Fast Intrinsic Diode

z

Dynamic dv/dt Rated

z

Low R

DS(ON)

and Q

G

z

Low Drain-to-Tab Capacitance

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High-Side Switching

z

Push Pull Amplifiers

z

DC Choppers

z

Automatic Test Equipment

z

Current Regulators

TO-263 AA (IXTA)

G

S

D (Tab)

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

D

D (Tab)

TO-3P (IXTQ)

D

G

S

D (Tab)

TO-220AB (IXTP)

D (Tab)

S

D

G

IXTA36P15P IXTP36P15P

IXTQ36P15P IXTH36P15P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note 1 11 19 S

C

iss

3100 pF

C

oss

V

GS

= 0V, V

DS

= - 25V, f = 1MHz 610 pF

C

rss

100 pF

t

d(on)

21 ns

t

r

31 ns

t

d(off)

36 ns

t

f

15 ns

Q

g(on)

55 nC

Q

gs

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

20 nC

Q

gd

18 nC

R

thJC

0.42 °C/W

R

thCS

(TO-3P, TO-247) 0.21 °C/W

(TO-220) 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V - 36 A

I

SM

Repetitive, Pulse Width Limited by T

JM

-140 A

V

SD

I

F

= -18A, V

GS

= 0V, Note 1 - 3.3 V

t

rr

228 ns

Q

RM

2.0 μC

I

RM

-17.6 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Resistive Switching Times

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 3.3Ω (External)

I

F

= -18A, -di/dt = -100A/μs

V

R

= - 75V, V

GS

= 0V

IXTA36P15P IXTP36P15P

IXTH36P15P IXTQ36P15P

TO-263 Outline

1 - Gate

2,4 - Drain

3 - Source

TO-3P Outline

Pins: 1 - Gate 2,4 - Drain

3 - Source

TO-220 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

e

∅ P

TO-247 Outline

1 2 3

Pins: 1 - Gate

2 - Drain

3 - Source

Pins: 1 - Gate 2 - Drain

3 - Source

IXTP36P15P

IXTP36P15P

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