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IXTP36P15P

P1-P3P4-P6
IXTA36P15P IXTP36P15P
IXTQ36P15P IXTH36P15P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 1. Output Characteristics @ T
J
= 25ºC
-40
-35
-30
-25
-20
-15
-10
-5
0
-5.0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 6V
- 5V
-7V
- 8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-30-25-20-15-10-50
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 8V
- 6V
- 7V
- 9V
Fig. 3. Output Characteristics @ T
J
= 125ºC
-40
-35
-30
-25
-20
-15
-10
-5
0
-9-8-7-6-5-4-3-2-10
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5V
- 6V
- 7V
Fig. 4. R
DS(on)
Normalized to I
D
= -18A
Value
vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= - 36A
I
D
= -18A
Fig. 5. R
DS(on)
Normalized to I
D
= -18A
Value
vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-90-80-70-60-50-40-30-20-100
I
D
- Amperes
R
DS(on)
- Normalized
T
J
= 125ºC
V
GS
= -10V
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
-40
-35
-30
-25
-20
-15
-10
-5
0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA36P15P IXTP36P15P
IXTH36P15P IXTQ36P15P
Fig. 7. Input Admittance
-65
-55
-45
-35
-25
-15
-5
-8.5-8.0-7.5-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5
V
GS
- Volts
I
D
- Amperes
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
-80-70-60-50-40-30-20-100
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 75V
I
D
= -18A
I
G
= -1mA
Fig. 11. Capacitance
10
100
1,000
10,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
oss
C
rss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
-
-- -
100ms
IXTA36P15P IXTP36P15P
IXTQ36P15P IXTH36P15P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_36P15P(B5)3-26-08-B
Fig. 13. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXTP36P15P

Mfr. #:
Buy IXTP36P15P
Manufacturer:
Littelfuse
Description:
MOSFET -36.0 Amps -150V 0.110 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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