6.42
IDT7024S/L
High-Speed 4K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
7
Data Retention Waveform
AC Test Conditions
Figure 2. Output Test Load
(for t
LZ, tHZ, tWZ, tOW)
*Including scope and Jig
Figure 1. AC Output Test Load
DA
T
ARE
T
EN
T
ION MODE
V
CC
CE
2740 drw 05
4.5V
t
CDR
t
R
V
IH
V
DR
V
IH
4.5V
V
DR
2V
2740 drw 06
1250
30pF
775
5V
DATA
OUT
BUSY
INT
1250
5pF*
775
5V
DATA
OUT
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns
1.5V
1.5V
Figures 1 and 2
2740 tbl 11
6.42
IDT7024S/L
High-Speed 4K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
8
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = V
IL, UB or LB = VIL, and SEM =VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM =VIL.
4. 'X' in part number indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(4)
7024X15
Com'l Only
7024X17
Com'l Only
7024X20
Com'l, Ind
& Military
7024X25
Com'l &
Military
UnitSymbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.
READ CYCLE
t
RC
Read Cycle Time 15
____
17
____
20
____
25
____
ns
t
AA
Address Access Time
____
15
____
17
____
20
____
25 ns
t
ACE
Chip Enable Access Time
(3 )
____
15
____
17
____
20
____
25 ns
t
ABE
Byte Enable Access Time
(3 )
____
15
____
17
____
20
____
25 ns
t
AOE
Output Enable Access Time
____
10
____
10
____
12
____
13 ns
t
OH
Output Hold from Address Change 3
____
3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
10
____
10
____
12
____
15 ns
t
PU
Chip Enable to Power Up Time
(1,2)
0
____
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(1,2)
____
15
____
17
____
20
____
25 ns
t
SOP
Semaphore Flag Update Pulse (OE or SEM)10
____
10
____
10
____
10
____
ns
t
SAA
Semaphore Address Access
(3 )
____
15
____
17
____
20
____
25 ns
2740 tbl 12a
7024X35
Com'l &
Military
7024X55
Com'l, Ind
& Military
7024X70
Military Only
UnitSymbol Parameter Min.Max.Min.Max.Min.Max.
READ CYCLE
t
RC
Read Cycle Time 35
____
55
____
70
____
ns
t
AA
Address Access Time
____
35
____
55
____
70 ns
t
ACE
Chip Enable Access Time
(3 )
____
35
____
55
____
70 ns
t
ABE
Byte Enable Access Time
(3 )
____
35
____
55
____
70 ns
t
AOE
Output Enable Access Time
____
20
____
30
____
35 ns
t
OH
Output Hold from Address Change 3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
15
____
25
____
30 ns
t
PU
Chip Enable to Power Up Time
(1,2)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(1,2)
____
35
____
50
____
50 ns
t
SOP
Semaphore Flag Update Pulse (OE or SEM)15
____
15
____
15
____
ns
t
SAA
Semaphore Address Access
(3)
____
35
____
55
____
70 ns
2740 tbl 12b
6.42
IDT7024S/L
High-Speed 4K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
9
NOTES:
1. Timing depends on which signal is asserted last, CE, OE, LB, or UB.
2. Timing depends on which signal is de-asserted first, CE, OE, LB, or UB.
3. t
BDD delay is required only in cases where opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has
no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last t
ABE, tAOE, tACE, tAA or tBDD.
5. SEM = V
IH.
Timing of Power-Up Power-Down
Waveform of Read Cycles
(5)
t
RC
R/W
CE
ADDR
t
AA
OE
UB, LB
2740 drw 07
(4)
t
ACE
(4)
t
AOE
(4)
t
ABE
(4)
(1)
t
LZ
t
OH
(2)
t
HZ
(3,4)
t
BDD
DATA
OUT
BUSY
OUT
VALID DATA
(4)
CE
2740 drw 08
t
PU
I
CC
I
SB
t
PD
,

7024S35J

Mfr. #:
Manufacturer:
Description:
SRAM 4KX16 DUAL PORT STAT RAM
Lifecycle:
New from this manufacturer.
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