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SP6660EN-L/TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
SP6660DS/11 SP6660 200mA Charge Pump Inverter or Doubler © Copyright 2000 Sipex Corporation
1
■ Inverts or Doubles Input Supply Voltage
■ 93% Power Efficiency at 3.6V
■ 10kHz/80kHz Selectable Oscillator
■ External Oscillator up to 700KHz
■ 5Ω Output Resistance at 3.6V
■ Low Voltage Battery Operation
■ Ideal for 3.6V Lithium Ion Battery
■ High Output Current – 200mA
■ Pin-Compatible High-Current Upgrade of
the ICL7660 and 660 Industry Standard
■ Smallest Package Available for the 660
Industry Standard – 8pin µSOIC
200mA Charge Pump Inverter or Doubler
SP6660
DESCRIPTION
The SP6660 is a CMOS DC-DC Monolithic Voltage Converter that can be implemented as a
Voltage Inverter or a Positive Voltage Doubler. As a Voltage Inverter, a -1.5V to -4.25V output
can be converted from a +1.5V to +4.25V input. As a Voltage Doubler, the SP6660 can provide
a +8.0V output at 100mA from a +4.25V input. The SP6660 is ideal for both battery-powered
and board level voltage conversion applications with a typical operating current of 400µA and
a high efficiency (>90%) over most of its load-current range. Typical end products for this
device are operational amplifier and interface power supplies, medical instruments, and hand-
held and laptop computers. The SP6660 is available in 8-pin DIP, SOIC, and µSOIC
packages.
OSC
OUT
SP6660
+V
IN
+1.5V to +4.25V
C1
1µF to 150µF
5
1
2
7
4
FC
C2
1µF to 150µF
CAP+
CAP-
GND
6
8
3
LV
NEGATIVE
VOLTAGE
OUTPUT
TYPICAL CIRCUIT: VOLTAGE INVERTER
+V
OSC
OUT
SP6660
+V
IN
+1.5V to +4.25V
C1
1µF to 150µF
5
1
2
7
4
FC
C2
1µF to 150µF
CAP+
CAP-
GND
6
8
3
LV
DOUBLE
VOLTAGE
OUTPUT
TYPICAL CIRCUIT: VOLTAGE DOUBLER
+V
®
Now Available in Lead Free Packaging
SP6660DS/11 SP6660 200mA Charge Pump Inverter or Doubler © Copyright 2000 Sipex Corporation
2
RETEMARAP.NIM.PYT.XAMSTINUSNOITIDNOC
051htiwycneuqerFwoLtatiucriCretrevnI µµ
µ
µµsroticapaCF
T,nepo=CF,Fµ051=2C=1C,V6.3=+V
BMA
T=
NIM
Tot
XAM
otrefer;
1erugiF
2etoN.tiucrictset
egatloVylppuS5.139.052.4VR
L
005=Ω4etoN,
tnerruCylppuS4.08.0AmdaoLoN
tnerruCtuptuO002Am
tnerruCtupnIrotallicsO1±Aµ
ycneuqerFrotallicsO50102zHk
ecnatsiseRtuptuO2.501
Ω
I
L
3etoN,Am001=
ycneiciffEnoisrevnoCegatloV00.9969.99%daoLoN
ycneiciffErewoP88
08
36
49
58
07
%
R
L
005=Ω
I
L
Am001=
I
L
Am002=
051htiwycneuqerFwoLtatiucriCrelbuoD µµ
µ
µµsroticapaCF
T,nepo=CF,Fµ051=2C=1C,V6.3=+V
BMA
T=
NIM
Tot
XAM
otrefer;
2erugiF
2etoN.tiucrictset
egatloVylppuS5.25.152.4VR
L
k1=Ω4etoN,
tnerruCylppuS4.08.0AmdaoLoN
tnerruCtuptuO002Am
tnerruCtupnIrotallicsO1±Aµ
ycneuqerFrotallicsO50102zHk
ecnatsiseRtuptuO2.501I
L
3etoN,Am001=
ycneiciffEnoisrevnoCegatloV00.9969.99%daoLoN
ycneiciffErewoP19
98
97
69
39
58
%
R
L
K1=Ω
I
L
Am001=
I
L
Am002=
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of the
device at these ratings or any other above those indicated in the
operation sections of the specifications below is not implied.
Exposure to absolute maximum rating conditions for extended
periods of time may affect reliability.
Power Supply Voltage
(V+ to GND or GND to OUT).........................................+4.5V
LV Input Voltages........................(OUT - 0.3V) to (V+ + 0.3V)
FC and OSC Input Voltages..................The least negative of
(OUT - 0.3V) or (V+ - 4.5V) to (V+ + 0.3V)
SPECIFICATIONS
OUT and V+ Continuous Output Current.....................250mA
Output Short-Circuit Duration to GND.................................1s
Operating Temperature Ranges
SP6660C_........................................0˚C to +70˚C
SP6660E_.....................................-40˚C to +85˚C
Continuous Power Dissipation (T
AMB
= 70˚C)
PDIP (derate 9.09mW/˚C above +70˚C)..................727mW
NSOIC (derate 5.88mW/˚C above +70˚C)...............471mW
µSOIC (derate 4.10mW/˚C above +70˚C)................330mW
Operating Temperature...................................-40˚C to +85˚C
Storage Temperature....................................-65˚C to +150˚C
Lead Temperature (soldering 10s)..............................+300˚C
Ω
SP6660DS/11 SP6660 200mA Charge Pump Inverter or Doubler © Copyright 2000 Sipex Corporation
3
NOTE 1: Specified output resistance is a combination of internal switch resistance and capacitor ESR.
NOTE 2: In the test circuit capacitors C1 and C2 are 150µF, 0.2 maximum ESR, tantalum or 22µF, 0.2
maximum ESR, tantalum. Capacitors with higher ESR may reduce output voltage and efficiency.
Refer to Capacitor Selection section.
NOTE 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR.
Refer to Capacitor Selection section.
NOTE 4: Typical value indicates start-up voltage.
SPECIFICATIONS (continued)
RETEMARAP.NIM.PYT.XAMSTINUSNOITIDNOC
22htiwycneuqerFhgiHtatiucriCretrevnI µµ
µ
µµsroticapaCF
T,+V=CF,Fµ22=2C=1C,V6.3=+V
BMA
T=
NIM
Tot
XAM
otrefer;
1erugiF
2etoN.tiucrictset
egatloVylppuS5.179.052.4VR
L
005=Ω4etoN,
tnerruCylppuS6.05.1AmdaoLoN
tnerruCtuptuO002Am
tnerruCtupnIrotallicsO8±Aµ
ycneuqerFrotallicsO0408061zHk
ecnatsiseRtuptuO0.501
Ω
I
L
3etoN,Am001=
ycneiciffEnoisrevnoCegatloV00.9969.99%daoLoN
ycneiciffErewoP68
08
36
29
68
17
%
R
L
005=Ω
I
L
Am001=
I
L
Am002=
22htiwycneuqerFhgIHtatiucriCrelbuoD µµ
µ
µµsroticapaCF
T,+V=CF,Fµ22=2C=1C,V6.3=+V
BMA
T=
NIM
Tot
XAM
otrefer;
2erugiF
2etoN.tiucrictset
egatloVylppuS5.26.152.4VR
L
k1=Ω4etoN,
tnerruCylppuS6.05.1AmdaoLoN
tnerruCtuptuO002Am
tnerruCtupnIrotallicsO8±Aµ
ycneuqerFrotallicsO0408061zHk
ecnatsiseRtuptuO0.501
Ω
I
L
3etoN,Am001=
ycneiciffEnoisrevnoCegatloV00.9969.99%daoLoN
ycneiciffErewoP09
98
97
49
39
58
%
R
L
K1=Ω
I
L
Am001=
I
L
Am002=
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

SP6660EN-L/TR

Mfr. #:
Buy SP6660EN-L/TR
Manufacturer:
MaxLinear
Description:
Switching Voltage Regulators 200mA Inverter or Doubler
Lifecycle:
New from this manufacturer.
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