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NLX2G08MUTCG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2016
June, 2018 − Rev. 9
1 Publication Order Number:
NLX2G08/D
NLX2G08
Dual 2-Input AND Gate
The NLX2G08 is an advanced high-speed dual 2-input CMOS
AND gate in ultra-small footprint.
The NLX2G08 input structures provide protection when voltages up
to 7.0 volts are applied, regardless of the supply voltage.
Features
• High Speed: t
PD
2.5 ns (typical) at V
CC
= 5.0 V
• Designed for 1.65 V to 5.5 V V
CC
Operation
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• 24 mA Balanced Output Sink and Source Capability
• Balanced Propagation Delays
• Overvoltage Tolerant (OVT) Input Pins
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
A1 1 V
CC
B1
GND
2
3
8
7
6
45
Y2
Y1
B2
A2
Figure 1. Pinouts
A1
1
V
CC
B1
GND
23
8
76
4
5
Y2
Y1 B2 A2
A2
Y2
&
Y1
A1
B2
B1
IEEE/IEC
Figure 2. Logic Symbol
Inputs
FUNCTION TABLE
B
L
H
L
H
Output
Y
L
H
A
L
L
H
H
L
L
Y = AB
H = HIGH Logic Level
L = LOW Logic Level
PIN ASSIGNMENT
Pin
1
2
3
4
5
6
7
8
Function
(UQFN8)
Y1
B2
A2
GND
Y2
B1
A1
V
CC
Function
(ULLGA/
UDFN)
A1
B1
Y2
GND
A2
B2
Y1
V
CC
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
UQFN8
MU SUFFIX
CASE 523AN
1
8
AD MG
G
1
(Note: Microdot may be in either location)
UDFN8
1.45 x 1.0
CASE 517BZ
UDFN8
1.6 x 1.0
CASE 517BY
UDFN8
1.95 x 1.0
CASE 517CA
X M
1
X M
1
X M
1
NLX2G08
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to +7.0 V
V
IN
DC Input Voltage *0.5 to +7.0 V
V
OUT
DC Output Voltage *0.5 to V
CC
+ 0.5 V
I
IK
DC Input Diode Current V
IN
< GND *50 mA
I
OK
DC Output Diode Current V
OUT
< GND *50 mA
I
O
DC Output Source/Sink Current $50 mA
I
CC
DC Supply Current per Supply Pin $100 mA
I
GND
DC Ground Current per Ground Pin $100 mA
T
STG
Storage Temperature Range *65 to )150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
q
JA
Thermal Resistance (Note 1) 250 °C/W
P
D
Power Dissipation in Still Air at 85°C 250 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>200
N/A
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) $500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Power DC Supply Voltage Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
IN
Digital Input Voltage (Note 6) 0 5.5 V
V
OUT
Output Voltage 0 V
CC
V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 1.8 V $0.15 V
V
CC
= 2.5 V $0.2 V
V
CC
= 3.3 V $0.3 V
V
CC
= 5.0 V $0.5 V
0
0
0
0
20
20
10
5
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.
NLX2G08
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Condition
V
CC
(V)
T
A
= 255C T
A
3 855C
T
A
= −555C to
+1255C
Uni
t
Min Typ Max Min Max Min Max
V
IH
High−Level Input
Voltage
1.65
2.3 to 5.5
0.75 x
V
CC
0.7 x
V
CC
0.75 x
V
CC
0.7 x
V
CC
0.75 x
V
CC
0.7 x
V
CC
V
V
IL
Low−Level Input
Voltage
1.65
2.3 to 5.5
0.25 x
V
CC
0.3 x
V
CC
0.25 x
V
CC
0.3 x
V
CC
0.25 x
V
CC
0.3 x
V
CC
V
V
OH
High−Level
Output Voltage
V
IN
= V
IH
or V
IL
,
I
OH
= −100 mA
1.65 to 5.5 V
CC
−
0.1
V
CC
V
CC
−
0.1
V
CC
−
0.1
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65
2.3
2.7
3.0
3.0
4.5
1.29
1.9
2.2
2.4
2.3
3.8
1.5
2.1
2.4
2.7
2.5
4.0
1.29
1.9
2.2
2.4
2.3
3.8
1.29
1.9
2.2
2.4
2.3
3.8
V
OL
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
,
I
OL
= 100 mA
1.65 to 5.5 0.1 0.1 0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
1.65
2.3
2.7
3.0
3.0
4.5
0.08
0.20
0.22
0.28
0.38
0.42
0.24
0.3
0.4
0.4
0.55
0.55
0.24
0.3
0.4
0.4
0.55
0.55
0.24
0.3
0.4
0.4
0.55
0.55
I
IN
Input Leakage
Current
0 ≤ V
IN
≤ 5.5 V 0 to 5.5 $0.1 $1.0 $1.0
mA
I
OFF
Power−Off Input
Leakage Current
V
IN
= 5.5 V 0 1.0 10 10
mA
I
CC
Quiescent Supply
Current
0 ≤ V
IN
≤ 5.5 V 5.5 1.0 10 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS t
R
= t
F
= 2.5 ns
Symbo
l
Parameter
V
CC
(V)
Test Condition
T
A
= 255C T
A
3 855C
T
A
= −555C
to +1255C
Uni
t
Min Typ Max Min Max Min Max
t
PLH
t
PHL
Propagation Delay
Input A to Output
1.65 to 1.95
R
L
= 1 MW, C
L
= 15 pF
2.0 5.7 10.5 2.0 11.0 2.0 11.2
ns
2.3 to 2.7
R
L
= 1 MW, C
L
= 15 pF
1.2 3.5 5.8 1.2 6.2 1.2 6.3
3.0 to 3.6
R
L
= 1 MW, C
L
= 15 pF
0.8 2.6 3.9 0.8 4.3 0.8 4.7
R
L
= 500 W, C
L
= 50 pF
3.2 4.8 5.2 5.3
4.5 to 5.5
R
L
= 1 MW, C
L
= 15 pF
1.9 3.1 3.3 0.5 4.0
R
L
= 500 W, C
L
= 50 pF
2.5 3.7 4.0 4.3
C
IN
Input Capacitance 5.5 V
IN
= 0 V or V
CC
2.5 pF
C
PD
Power Dissipation
Capacitance (Note 7)
3.3
5.5
10 MHz, V
IN
= 0V or
V
CC
9
11
pF
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6P7-P8

NLX2G08MUTCG

Mfr. #:
Buy NLX2G08MUTCG
Manufacturer:
ON Semiconductor
Description:
Logic Gates DUAL 2 INPUT AND GATE
Lifecycle:
New from this manufacturer.
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