NXP Semiconductors
PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
PMEG6030EVP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 4 March 2013 3 / 13
Symbol Parameter Conditions Min Max Unit
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 200 K/W
[1][3] - - 120 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 60 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 12 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of cathode tab.
006aab688
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
t
p
(s)
10
- 3
10
2
10
3
10110
- 2
10
- 1
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
