NXP Semiconductors
PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
PMEG6030EVP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 4 March 2013 7 / 13
aaa-006607
V
R
(V)
0 604020
0.2
0.1
0.3
0.4
P
R(AV)
(W)
0
(1)
(2)
(3)
(4)
T
j
= 85 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 10. Average reverse power dissipation as a
function of reverse voltage; typical values
T
amb
(°C)
0 20015050 100
aaa-006608
2
3
1
4
5
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, standard footprint
T
j
= 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 11. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 20015050 100
aaa-006609
2
3
1
4
5
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of
ambient temperature; typical values
T
amb
(°C)
0 20015050 100
aaa-006610
2
3
1
4
5
I
F(AV)
(A)
0
(1)
(2)
(3)
(4)
Ceramic PCB, Al
2
O
3
, standard footprint
T
j
= 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 13. Average forward current as a function of
ambient temperature; typical values
