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STB80NF55-06T4

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
October 2006 Rev 8 1/17
17
STB80NF55-06 - STB80NF55-06-1
STP80NF55-06 - STP80NF55-06FP
N-channel 55V - 0.005Ω - 80A - TO-220 /FP - I
2
PAK - D
2
PA K
STripFET™ II Power MOSFET
General features
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB80NF55-06 55V <0.0065Ω 80A
(1)
1. Limited by package
STB80NF55-06-1 55V <0.0065Ω 80A
(1)
STP80NF55-06 55V <0.0065Ω 80A
(1)
STP80NF55-06FP 55V <0.0065Ω 60A
(1)
1
2
3
TO-220 TO-220FP
D²PAK
I²PAK
1
3
1
2
3
1
2
3
www.st.com
Order codes
Part number Marking Package Packaging
STB80NF55-06T4 B80NF55-06 D²PAK Tape & reel
STB80NF55-06-1 B80NF55-06-1 I²PAK Tube
STP80NF55-06 P80NF55-06 TO-220 Tube
STP80NF55-06FP P80NF55-06FP TO-220FP Tube
Contents STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB80NF55-06 - STB80NF55-06-1 - STP80NF55-06 - STP80NF55-06FP Electrical ratings
3/17
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 / D²/ I²PAK TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 55 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. Limited by Package
Drain current (continuous) at T
C
= 25°C 80
60
(2)
2. Limited only by maximum temperature allowed
A
I
D
(1)
Drain current (continuous) at T
C
=100°C 80
42
(2)
A
I
DM
(3)
3. Pulse width limited by safe operating area
Drain current (pulsed) 320
240
(2)
A
P
TOT
Total dissipation at T
C
= 25°C 300 45 W
Derating factor 2 0.30 W/°C
dv/dt
(4)
4. ) I
SD
≤ 80A, di/dt ≤ 400A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
Peak diode recovery voltage slope 7 V/ns
E
AS
(5)
5. Starting T
J
= 25
o
C, I
D
= 40A, V
DD
= 45V
Single pulse avalanche energy 1.3 J
V
ISO
Insulation withstand voltage (DC) -- 2500 V
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 2. Thermal data
Symbol Parameter
Value
Unit
TO-220 / D²/ I²PAK TO-220FP
R
thJC
Thermal resistance junction-case max 0.5 3.33 °C/W
R
thJA
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

STB80NF55-06T4

Mfr. #:
Buy STB80NF55-06T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 55 Volt 80 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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