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STB80NF55-06T4
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
Electrical ch
aracteristics
STB80NF55-06 - STB80NF55-
06-1 - STP80NF55-06 - STP80
NF55-06FP
4/17
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 3.
On/off states
Symbol
Parameter
T
est conditio
ns
Min.
T
yp.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250
µ
A, V
GS
= 0
55
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100
nA
V
GS(th)
Gate threshold v
oltage
V
DS
= V
GS
, I
D
= 250µA
23
4
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V
, I
D
= 40A
0.005
0.0065
Ω
T
able 4.
Dynamic
Symbol
Parameter
T
est cond
itions Min.
T
yp.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward transconductance
V
DS
=15V
, I
D
= 40A
150
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Re
v
erse tr
ansf
er
capacitance
V
DS
=25V
, f=1 MHz, V
GS
=0
4400
1020
350
pF
pF
pF
Q
g
Q
gs
Q
gd
T
otal gate charge
Gate-source charge
Gate-drain charge
V
DD
= 44V
, I
D
= 80A
V
GS
=10V
142
29
60.5
189
nC
nC
nC
T
able 5.
Switchi
ng times
Symbol
P
arameter
T
est cond
itions
Min.
T
yp
.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
T
ur
n-on delay time
Rise time
T
ur
n-off delay time
F
all ti
me
V
DD
= 50 V
, I
D
= 40A,
R
G
=4.7
Ω,
V
GS
=10V
(see
Figure 15
)
27
155
125
65
ns
ns
ns
ns
STB80NF55-06 - STB80NF5
5-06-1 - STP80NF55
-06 - STP80NF55-06F
P
Electrical characteris
tics
5/17
T
able 6.
Sourc
e drain diode
Symbol
P
arameter
T
est conditions
Min
T
yp.
Max
Unit
I
SD
Source-drain current
80
A
I
SDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
320
A
V
SD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
F
orward on voltage
I
SD
=80A, V
GS
=0
1.5
V
t
rr
Q
rr
I
RRM
Re
verse reco
ver
y time
Rev
erse recovery charge
Re
ve
rse recov
er
y current
I
SD
=80A,
di/dt = 100A/µs,
V
DD
=35V
,
T
J
= 150°C
100
0.32
6.5
ns
µC
A
Electrical ch
aracteristics
STB80NF55-06 - STB80NF55-
06-1 - STP80NF55-06 - STP80
NF55-06FP
6/17
2.1 Electrical
characterist
ics (curves)
Figure 1.
Safe ope
rating area f
or T
O-220/
D
²
PA
K
/
I
²
PA
K
Figure 2.
Thermal impedance f
or TO-2
20/
D²P
AK/ I²P
AK
Figure 3.
Safe operatin
g area fo
r T
O-220FP
Figure 4.
Thermal impedance f
or TO-2
20FP
Figure 5.
Output
characterisi
cs
Figure 6.
T
ran
sfer characteristic
s
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P17
STB80NF55-06T4
Mfr. #:
Buy STB80NF55-06T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 55 Volt 80 Amp
Lifecycle:
New from this manufacturer.
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Products related to this Datasheet
STP80NF55-06
STP80NF55-06FP
STB80NF55-06T4
STB80NF55-06-1