IRFZ34NPbF
2 www.irf.com
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.6 V T
J
= 25°C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 57 86 ns T
J
= 25°C, I
F
= 16A
Q
rr
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 410µH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
I
SD
≤ 16 A, di/dt ≤ 420A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(ON)
Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω V
GS
= 10V, I
D
= 16A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 6.5 ––– ––– S V
DS
= 25V, I
D
= 16A
––– ––– 25 V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 34 I
D
= 16A
Q
gs
Gate-to-Source Charge ––– ––– 6.8 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 14 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 7.0 ––– V
DD
= 28V
t
r
Rise Time ––– 49 ––– I
D
= 16A
t
d(off)
Turn-Off Delay Time ––– 31 ––– R
G
= 18Ω
t
f
Fall Time ––– 40 ––– R
D
= 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 700 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 240 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
––– ––– 100
––– ––– 29
A
nH
L
D
Internal Drain Inductance ––– 4.5 –––
L
S
Internal Source Inductance ––– 7.5 –––
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
µA
nA
S
D
G
S
D
G
