IRFZ34NPBF

P1-P3 P4-P6 P7-P9

IRFZ34NPbF

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

200

400

600

800

1000

1200

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 10203040

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 44V

V = 28V

DS

DS

I = 16A

D

1

10

100

1000

0.4 0.8 1.2 1.6 2.0

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

IRFZ34NPbF

www.irf.com 5

Fig 10a. Switching Time Test Circuit

+

-

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

V

DS

10 V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

R

D

V

GS

V

DD

R

G

D.U.T.

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

25 50 75 100 125 150 175

0

5

10

15

20

25

30

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

V

DS

L

D.U.T.

V

DD

I

AS

t

p

0.01Ω

R

G

+

-

t

p

V

DS

I

AS

V

DD

V

(BR)DSS

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Q

G

Q

GS

Q

GD

V

G

Charge

10 V

0

20

40

60

80

100

120

140

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

DD

I

TOP 6.5A

11A

BOTTOM 16A

D

P1-P3 P4-P6 P7-P9

IRFZ34NPBF

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFT 55V 26A 40mOhm 22.7nC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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