1. Product profile
1.1 General description
The BGU7062N2 is a fully integrated analog-controlled variable gain amplifier module. Its
low noise and high linearity performance makes it ideal for sensitive receivers in cellular
base station applications. The BGU7062N2 is designed for the 1710 MHz to 1785 MHz
frequency range. It has a gain control range of more than 35 dB. At maximum gain the
noise figure is 0.77 dB. The gain is analog-controlled having maximum gain at 0 V and
minimum gain at 3.3 V. The LNA can be bypassed extending the dynamic range. The
BGU7062N2 is internally matched to 50 ohm, meaning no external matching is required,
enabling ease of use. It is housed in a 16 pins 8 mm 8 mm 1.3 mm leadless
HLQFN16R package SOT1301.
1.2 Features and benefits
Input and output internally matched to 50
Low noise figure of 0.77 dB
High IP3
i
of 1 dBm
High P
i(1dB)
of 12.3 dBm
Bypass mode of LNA giving high dynamic gain range
Gain control range of 0 dB to 35 dB
Single 5 V supply
Single analog gain control of 0 V to 3.3 V
Unconditionally stable up to 12.75 GHz
Moisture sensitivity level 3
ESD protection at all pins
1.3 Applications
Cellular base stations, remote radio heads
3G, LTE infrastructure
Low noise applications with variable gain and high linearity requirements
Active antenna
BGU7062N2
Analog high linearity low noise variable gain amplifier
Rev. 1 — 8 July 2013 Product data sheet
BGU7062N2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 8 July 2013 2 of 16
NXP Semiconductors
BGU7062N2
Analog high linearity low noise variable gain amplifier
1.4 Quick reference data
[1] high gain mode: GS1 = LOW; GS2 = HIGH (see Table 9)
[2] low gain mode: GS1 = HIGH; GS2 = LOW (see Table 9
)
2. Pinning information
2.1 Pinning
2.2 Pin description
Table 1. Quick reference data
V
CC1
= 5 V; V
CC2
= 5 V; f = 1750 MHz; T
amb
=25
C; input and output 50
; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CC(tot)
total supply current high gain mode
[1]
190 215 250 mA
low gain mode
[2]
165 185 215 mA
NF noise figure V
ctrl(Gp)
= 0 V (maximum power gain)
[1]
-0.77-dB
G
p
= 35 dB
[1]
- 0.94 1.1 dB
IP3
i
input third-order intercept point G
p
= 35 dB; 2-tone;
tone-spacing = 1.0 MHz
[1]
01.0- dBm
P
i(1dB)
input power at 1 dB gain compression G
p
= 35 dB
[1]
14 12.3 - dBm
Fig 1. Pin configuration
5)B,1
*1'
9
FWUO*S
QF
DDD
7UDQVSDUHQWWRSYLHZ
WHUPLQDO
LQGH[DUHD
*6
QF
LF




QF
*1'
5)B287



*1'
*6
QF
9
&&
9
&&
*1'
Table 2. Pin description
Symbol Pin Description
RF_IN 1 RF input
GND 2, 11, 13, 16 ground
GS1 3 gain switch control 1
n.c. 4, 5, 7, 10 not connected, internally open
BGU7062N2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 8 July 2013 3 of 16
NXP Semiconductors
BGU7062N2
Analog high linearity low noise variable gain amplifier
3. Ordering information
4. Functional diagram
GS2 6 gain switch control 2
i.c. 8 internally connected to ground
V
ctrl(Gp)
9 power gain control voltage
RF_OUT 12 RF output
V
CC2
14 supply voltage 2
V
CC1
15 supply voltage 1
Table 2. Pin description
…continued
Symbol Pin Description
Table 3. Ordering information
Type number Package
Name Description Version
BGU7062N2 HLQFN16R plastic thermal enhanced low profile quad flat package;
no leads; 16 terminals; body 8 8 1.3 mm
SOT1301-1
Fig 2. Functional diagram
5)B,1
*1'
9
FWUO*S
QF
DDD
WHUPLQDO
LQGH[DUHD
*
6
QF
LF
QF
*1'
5)B2
87



*1'
*6
QF
9
&&
9
&&
*1'
%<3$663$7+
/1$
9*$
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BGU7062N2Y

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier BGU7062N2/HLQFN16R///REEL 13 Q1 DP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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