BGU7062N2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 8 July 2013 4 of 16
NXP Semiconductors
BGU7062N2
Analog high linearity low noise variable gain amplifier
5. Limiting values
[1] high gain mode: GS1 = LOW; GS2 = HIGH (see Table 9)
[2] low gain mode: GS1 = HIGH; GS2 = LOW (see Table 9
)
6. Recommended operating conditions
7. Thermal characteristics
[1] The case temperature is measured at the ground solder pad.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 06 V
V
ctrl(Gp)
power gain control voltage 1+3.6V
V
I(GS1)
input voltage on pin GS1 1+3.6V
V
I(GS2)
input voltage on pin GS2 1+3.6V
P
i(RF)CW
continuous waveform
RF input power
high gain mode; V
ctrl(Gp)
= 0 V; 1710 MHz f 1785 MHz
[1]
-10dBm
low gain mode; V
ctrl(Gp)
= 0 V; 1710 MHz f 1785 MHz
[2]
-15dBm
T
j
junction temperature -150C
T
stg
storage temperature 40 +150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM); according to
ANSI/ESDA-JEDEC JS-001-2010-Device Testing, Human
Body Model
- 2kV
Charged Device Model (CDM); according to JEDEC
standard 22-C101
- 750 V
Table 5. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC1
supply voltage 1 4.75 5 5.25 V
V
CC2
supply voltage 2 4.75 5 5.25 V
V
ctrl(Gp)
power gain control voltage 0 - 3.3 V
V
I(GS1)
input voltage on pin GS1 0 - 3.3 V
V
I(GS2)
input voltage on pin GS2 0 - 3.3 V
Z
0
characteristic impedance - 50 -
T
case
case temperature 40 - +85 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-case)
thermal resistance from junction to case
[1]
42 K/W
