AOT460
Symbol Min Typ Max Units
BV
DSS
60 V
10
T
J
=55°C 50
I
GSS
100 nA
V
GS(th)
2 2.95 4 V
I
D(ON)
340 A
6.3 7.5
T
J
=125°C 10.5 13
g
FS
90
S
V
SD
0.7 1 V
I
S
85 A
C
iss
3800 4560 pF
C
oss
430 pF
C
rss
190 pF
R
g
1.5 2.3 Ω
Q
g
(10V) 68 88 nC
Q
g
(4.5V) 33 nC
Q
gs
15 nC
Q
gd
19 nC
t
D(on)
18 ns
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=30A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
I
S
=1A, V
GS
=0V
V
DS
=5V, I
D
=30A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Zero Gate Voltage Drain Current
Gate-Body leakage current
Diode Forward Voltage
Static Drain-Source On-Resistance
R
DS(ON)
I
DSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
µA
Gate Threshold Voltage
V
DS
=V
GS
,
I
D
=250µA
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage
On state drain current
I
D
=250uA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
SWITCHING PARAMETERS
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
t
D(off)
44 ns
t
f
23 ns
t
rr
53
64 ns
Q
rr
98 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=30A, dI/dt=100A/µs
Turn-Off DelayTime
R
GEN
=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=30A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: Jan. 2009
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
