AOT460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 20 40 60 80
V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
2
4
6
0 15 30 45 60
Capacitance (nF)
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
V
DS
=30V
I
D
=30A
1
10
100
1000
I
D
(A)
T
J(Max)
=175°C
T
C
=25°C
R
DS(ON)
limited
1ms
100
1000
10000
Power (W)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.45°C/W
T
T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
1 10 100
V
DS
(V)
Figure 9: Maximun Forward Biased Safe Operating
Area (Note F)
T
C
=25°C
100
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
