OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STB60NF10T4

P1-P3P4-P6P7-P9P10-P12P13-P15
September 2006 Rev 4 1/15
15
Order codes
Part number Marking Package Packaging
STB60NF10T4 B60NF10 D²PAK Tape & reel
STB60NF10-1 B60NF10 I²PAK Tube
STP60NF10 P60NF10 TO-220 Tube
STB60NF10
STB60NF10-1 - STP60NF10
N-channel 100V - 0.019Ω - 80A - TO-220 - D
2
PA K - I
2
PA K
STripFET™ II Power MOSFET
General features
■ Exceptional dv/dt capability
■ 100% avalanche tested
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
■ Switching application
Internal schematic diagram
Type
V
DSS
(@Tjmax)
R
DS(on)
I
D
STB60NF10 100V <0.023Ω 80A
STB60NF10-1 100V <0.023Ω 80A
STP60NF10 100V <0.023Ω 80A
1
2
3
TO-220
D²PAK
1
3
1
2
3
I²PAK
www.st.com
Contents STB60NF10 - STB60NF10 -1 - STP60NF10
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STB60NF10 - STB60NF10 -1 - STP60NF10 Electrical ratings
3/15
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
GS
Gate-source voltage ± 20 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25°C 80 A
I
D
Drain current (continuous) at T
C
=100°C 66 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
C
= 25°C 300 W
Derating factor 2 W/°C
dv/dt
(3)
3. I
SD
≤ 80A, di/dt ≤ 300A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ T
JMAX
Peak diode recovery voltage slope 16 V/ns
E
AS
(4)
4. Starting T
J
= 25
o
C, I
D
= 40A, V
DD
= 30V
Single pulse avalanche energy 485 J
T
stg
Storage temperature -55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max 0.5 °C/W
R
thJA
Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
P1-P3P4-P6P7-P9P10-P12P13-P15

STB60NF10T4

Mfr. #:
Buy STB60NF10T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 100V 0.019Ohm 80A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet