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STB60NF10T4

P1-P3P4-P6P7-P9P10-P12P13-P15
Electrical characteristics STB60NF10 - STB60NF10 -1 - STP60NF10
4/15
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
100 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
23 4V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A
0.019 0.023 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
= 25V, I
D
= 40A
78 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f = 1 MHz,
V
GS
= 0
4270
470
140
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 50V, I
D
= 80A
V
GS
=10V
104
20
32
nC
nC
nC
STB60NF10 - STB60NF10 -1 - STP60NF10 Electrical characteristics
5/15
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50V, I
D
= 40A,
R
G
=4.7Ω, V
GS
=10V
Figure 13 on page 8
17
56
82
23
ns
ns
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 80 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 320 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 80A, V
GS
= 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80A,
di/dt = 100A/µs,
V
DD
= 25V, T
J
= 150°C
Figure 15 on page 8
92
340
7.4
ns
nC
A
Electrical characteristics STB60NF10 - STB60NF10 -1 - STP60NF10
6/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P15

STB60NF10T4

Mfr. #:
Buy STB60NF10T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 100V 0.019Ohm 80A
Lifecycle:
New from this manufacturer.
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